Table of Contents

Jpn. J. Appl. Phys. Vol.29(1990)
Part 1, No. 11, 20 November 1990


2327-2331 : Preparation of High-Quality n-Type Poly-Si Films by the Solid Phase Crystallization (SPC) Method
Takao Matsuyama, Kenichiro Wakisaka, Masaaki Kameda, Makoto Tanaka, Tsugufumi Matsuoka, Shinya Tsuda, Shoichi Nakano, Yasuo Kishi and Yukinori Kuwano
2332-2341 : Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaPxAs1-x (x=0, 0.2, 0.4) Substrates
Masayuki Ishikawa, Tomohiro Onda, Nagaatsu Ogasawara and Ryoichi Ito
2342-2350 : Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE
Morio Wada, Masahito Seko, Katsutoshi Sakakibara and Yoichi Sekiguchi
2351-2357 : Analysis of Deposition Selectivity in Selective Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition
Ko-ichi Yamaguchi and Kotaro Okamoto
2358-2364 : Optimization of Chemical Vapor Deposition Conditions of Amorphous-Silicon Films for Thin-Film Transistor Application
Hiroshi Kanoh, Osamu Sugiura, Paul A. Breddels and Masakiyo Matsumura
2365-2370 : Influence of Chamber Pressure on Hydrogen Bonding Configurations in a-SiGe:H Films Prepared by Photo-CVD
Abhijit De, Gautam Ganguly, Swati Ray and A. K. Barua
2371-2375 : Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si
Norio Hayafuji, Motoharu Miyashita, Takashi Nishimura, Kaoru Kadoiwa, Hisao Kumabe and Toshio Murotani
2376-2380 : Negative Transconductance in AlGaAs/GaAs Heterojunction Bipolar Transistors
Tetsuro Nozu and Masao Obara
2381-2385 : Influence of Effective Masses on the Oscillation of Fowler-Nordheim Tunneling in Thin SiO2 MOS Capacitors
Yukinori Ono and Takahiro Makino
2386-2387 : Doping Characteristics of Gas-Source MBE-Grown n-AlxGa1-xAs (x=0-0.28) Doped Using Disilane(Short Note)
Toshio Fujii, Adarsh Sandhu, Hideyasu Ando, Yuji Kataoka and Hideaki Ishikawa
2388-2402 : New Classification Method for Layered Copper Oxide Compounds and Its Application to Design of New High Tc Superconductors
Yoshinori Tokura and Takahisa Arima
2403-2406 : Magnetic Shielding Effect of Ba2YCu3O7-δ Plates
Shigetoshi Ohshima and Katsuro Okuyama
2407-2410 : Microwave Properties of Inhomogeneous YBa2Cu3O7
Jun Tateno and Norio Masaki
2411-2412 : Flux Line Dynamics Crossover in the Tl-Ba-Ca-Cu-O Thin Film(Short Note)
Chungyung Wang, Hung-Lun Chang, Ming-Lee Chu, Jenh-Yih Juang, Yih-Shun Gou and Tzeng-Ming Uen
2413-2414 : Growth and Characterization of Bi2(Sr1-xCax)3Cu2Oy Single Crystals Extracted from KBr Flux(Short Note)
Toetsu Shishido, Naoki Toyota, Daisuke Shindo and Tsuguo Fukuda
2415-2416 : Polarized Electromagnetic Detections by High Tc Superconducting Antenna(Short Note)
Toshiro Ohnuma
2417-2419 : Local Magnetic Anisotropic Effects in Fe-B-Si Metallic Glasses
G. V. S. Murthy and S. B. Raju
2420-2423 : Crossed Grating Beam Splitter for Magnetooptical Pickup Head
Nobuhiro Kawatsuki and Masao Uetsuki
2424-2425 : Resonance Phenomenon in a Self-Terminating Metal Vapor Laser(Short Note)
Hiroshi Taniguchi and Hiroshi Saito
2426-2428 : Chlorine-Kβ X-Ray Emission Spectra from 3d Transition-Metal Chlorides
Chikara Sugiura
2429-2434 : Crystal Growth during the Sintering of Ultrafine SiC Powders Containing Much Free-Si
Yoshinori Ando and Masato Ohkohchi
2435-2439 : Effect of La Content on the Thermal Volume Change of Ba4.22Na1.44Nb10.12O30.24-Ba3NaLaNb10O30 Solid Solutions at Ferroelectric Transition Temperature
Masaji Shimazu, Hirokazu Shinya, Shinichiro Kuroiwa, Masayuki Tsukioka and Sadao Tsutsumi
2440-2444 : Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE System
Yoichi Kawakami, Takashi Toyoda, Yi-hong Wu, Shizuo Fujita and Shigeo Fujita
2445-2449 : Gas Evaporation of Zn by Means of the Top-Heating Vertical Furnace
Minoru Dohi, Shinya Sawai, Manabu Kato and Nobuhiko Wada
2450-2455 : Role of Silicon Self-Interstitials Injected by Thermal Oxidation in Oxygen Precipitation in Czochralski Silicon
Hideki Yamanaka, Yoshihira Aoki and Takahide Samizo
2456-2459 : Anomalous Change in Temperature during the Pressure-Induced Phase Transition of KI
Motoyuki Nomura, Hideo Harino and Tsukasa Itoh
2460-2464 : Decomposition Temperature of Fatty Acid Metal Salts Used as the Constituent Molecules of Molecular Cognizance Thin Solid Films
Toshiaki Ushikusa
2465-2466 : Rapid Cooling Process in Thermooptic Effect of Smectic A-Cholesteric Mixed Liquid Crystals(Short Note)
Nobuhiko Nawa
2467-2472 : Preparation of BaTiO3 and SrTiO3 Polycrystalline Thin Films on Flexible Polymer Film Substrate by Hydrothermal Method
Nobuo Ishizawa, Hidekuni Banno, Motoo Hayashi, Seung Eul Yoo and Masahiro Yoshimura
2473-2476 : AES and XPS Studies of Surface of AlxGa1-xAs (110) Treated by Ammonium Sulfide
Hirotaka Ohno, Hidenori Kawanishi, Yoshiro Akagi, Yoshiharu Nakajima and Toshiki Hijikata
2477-2480 : Nitride and Oxide Formation on Pure Metals by Pulse Laser Irradiation
Shigeto R. Nishitani, Hiroto Yamaoka and Masaharu Yamaguchi
2481-2486 : Quantum Size Effect and HRTEM Observation of CdSe Microcrystallites Doped into SiO2-Glass Films Prepared by Rf-Sputtering
Keiji Tsunetomo, Akira Kawabuchi, Haruyuki Kitayama, Yukio Osaka and Hiroyuki Nasu
2487-2490 : ECR Plasma CVD Using a Slotted Lisitano Coil
Yoshinobu Kawai, Akio Komori, Hidehiko Ikeda, Kengo Kishimoto, Masayoshi Murata and Satoshi Uchida
2491-2496 : Local Structure of ECR Process Plasma
Shoji Miyake, Wei Chen and Tomio Ariyasu
2497-2498 : Time-Averaged Electric Field Profiles in a Capacitive Coupling Parallel Plate Electrode RF Discharge Helium Plasma(Short Note)
Teruo Kaneda, Tadahiro Kubota, Mikio Ohuchi and Jen-Shih Chang
2499-2500 : Observation of a Visible Line Emission from RF and ECR Oxygen Plasmas(Short Note)
Yuichi Sakamoto, Hideki Kokai, Shuji Komuro, Tomoo Uchiyama, Kunihiro Kashiwagi, Takitaro Morikawa and Yoichi Murayama
2501-2505 : Fractal Structure of Electrochemically Polymerized Polypyrrole and Growth Process as Function of Monomer Concentration, Electrolyte Concentration and Applied Voltage
Masaharu Fujii, Yasuhide Saeki, Kiyomitsu Arii and Katsumi Yoshino
2506-2511 : Molecular Interaction between Merocyanine Dye and Several Kinds of Triphenyl Methane Derivatives in Langmuir-Blodgett Films
Choichiro Okazaki, Shigekazu Kuniyoshi, Kazuhiro Kudo and Kuniaki Tanaka
2512-2513 : The Comparison of the Background Removal Methods in XPS Spectra(Short Note)
Heizo Tokutaka, Naganori Ishihara, Katsumi Nishimori, Satoru Kishida and Takuei Takabuchi
2514-2518 : Thin Film Monitoring with Ellipsometry in In-Line Processing Equipment
Yasuaki Hayashi
2519-2525 : Precise Pressure-Temperature Control System for Electrical Measurements down to 4.2 K Using Helium Gas as a Pressure Transmitting Medium
Tomoyuki Hikita, Taketoki Maruyama and Noboru Yamada
2526-2530 : Plasma CVD-Grown 10B-Enriched Boron Films for Si Neutron Detectors
Noritada Sato, Osamu Ishiwata, Yasukazu Seki and Atsushi Ueda
2531-2534 : Position Control of Electron Energy Loss Spectrum in Case of Accelerating-Voltage Fluctuation
Kiyokazu Yoshida, Akio Takaoka, Katsumi Ura and Hiroshi Fujita
2535-2540 : Si/W Ratio Changes and Film Peeling during Polycide Annealing
Chue-san Yoo, Tin-hwang Lin, Nun-sien Tsai and Leo. J. Ijzendoorn
2541-2542 : X-Ray Photoacoustic Spectroscopy of Brass(Short Note)
Taro Toyoda, Tsutomu Masujima, Hideaki Shiwaku, Atsuo Iida and Masami Ando
2543-2549 : Penetration of Hypervelocity Projectile into Foamed Polystyrene
Toshihiro Ishibashi, Akira Fujiwara and Naoyuki Fujii
2553-2558 : ArF Excimer Laser Projection Lithography Using Partially Achromatized Lens System
Yoshiharu Ozaki, Yoshio Kawai and Akira Yoshikawa
2559-2562 : Nanometer Pattern Transfer by VUV Lithography with a D2 Lamp
Katsuhiko Mutoh, Takashi Iwabuchi, Kazuhiro Kudo, Hisashi Watanabe, Yoshihiro Todokoro, Takeo Miyata and Reiji Sano
2563-2567 : A Consideration of the Deformation of Rectangular Pattern
Hidehito Tanaka, Tsuneo Ota, Keisuke Tanimoto, Ryohei Kawabata and Hikou Shibayama
2568-2571 : A Chromatic Aberration-Free Heterodyne Alignment for Optical Lithography
Tatsuhiko Higashiki, Toru Tojo, Mitsuo Tabata, Takeshi Nishizaka, Mitsuo Matsumoto and Yoshito Sameda
2572-2576 : Study of Hydrogen Vacuum-Ultraviolet Light Sources for Submicron Lithography
Kazuhiro Kudo, Takashi Iwabuchi, Katsuhiko Mutoh, Takeo Miyata, Reiji Sano and Kuniaki Tanaka
2577-2583 : New Alignment Sensors for Optical Lithography
Nobutaka Magome, Kazuya Ota and Kenji Nishi
2584-2589 : Electron Beam Direct Writing Technologies for 0.3-µm ULSI Devices
Koichi Moriizumi, Susumu Takeuchi, Takeshi Fujino, Satoshi Aoyama, Masahiro Yoneda, Hiroaki Morimoto and Yaichiro Watakabe
2590-2595 : Electron Beam Direct Writing Technology for 64-Mb DRAM LSIs
Fumio Murai, Yoshinori Nakayama, Isao Sakama, Toru Kaga, Yoshinobu Nakagome, Yoshifumi Kawamoto and Sinji Okazaki
2596-2599 : The Application of the Correlation Method for the EB (Electron Beam) Exposure System
Ichiro Kawamura, Teruaki Okino, Nobuo Handa, Hitosi Sato and Nobuo Goto
2600-2604 : High-Precision X-Ray Mask Technology
Shigehisa Ohki and Hideo Yoshihara
2605-2609 : Silicon Membrane Mask Blanks for X-Ray and Ion Projection Lithography
B. Löchel, J. Chlebek, J. Grimm, H.-L. Huber and A. Macioek
2610-2615 : Dynamic Thermal Distortions in an X-ray Mask Membrane During Pulsed X-Ray Exposure
Akira Chiba and Koichi Okada
2616-2619 : Ta Film Properties for X-Ray Mask Absorbers
Masatoshi Oda, Akira Ozawa, Shigehisa Ohki and Hideo Yoshihara
2620-2624 : Update on the Compact Synchrotron X-Ray Source Helios
M. N. Wilson, A. I. C. Smith, V. C. Kempson, A. L. Purvis, R. J. Anderson, M. C. Townsend, A. R. Jorden, D. E. Andrews, V. P. Suller and M. W. Poole
2625-2631 : New Simulation for Wet and Dry Developable Photoresists
A. J. W. Tol, M. E. Reuhman, G. D. Maxwell, H. P. Urbach and R. J. Visser
2632-2637 : Negative Resist for i-Line Lithography Utilizing Acid Catalyzed Silanol-Condensation Reaction
Nobuaki Hayashi, Keiko Tadano, Toshihiko Tanaka, Hiroshi Shiraishi, Takumi Ueno and Takao Iwayanagi
2638-2640 : Organotin-Containing Resists (TMAR) for X-Ray Lithography
Youko Tanaka, Hideo Horibe, Shigeru Kubota, Hiroshi Koezuka, Nobuyuki Yoshioka, Satoshi Aoyama, Yaichiroh Watakabe and Hideki Maezawa
2641-2643 : High Etch Rate Modes in Microwave Plasma Etching of Silicon in High Magnetic Fields
Haruo Shindo, Tetsuro Hashimoto, Fumitake Amasaki and Yasuhiro Horiike
2644-2647 : Highly Selective AlSiCu Etching Using BBr3 Mixed-Gas Plasma
Masahiro Yoneda, Hisaharu Sawai, Nobuo Fujiwara, Kyusaku Nishioka and Haruhiko Abe
2648-2652 : Atomic Layer Controlled Digital Etching of Silicon
Hiroyuki Sakaue, Seiji Iseda, Kazushi Asami, Jirou Yamamoto, Masataka Hirose and Yasuhiro Horiike
2653-2656 : Novel Process for Direct Delineation of Spin on Glass (SOG)
Akira Imai, Hiroshi Fukuda, Takumi Ueno and Shinji Okazaki
2657-2661 : Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition with In-situ XPS Measurement
Hideaki Kawamoto, Hiroyuki Sakaue, Shinobu Takehiro and Yasuhiro Horiike
2662-2664 : Fundamental Characteristics of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film
Mutsuo Ogura, Masanori Komuro and Keizo Shimizu
2665-2670 : SiO2/Si Interfaces Studied by STM and HRTEM (II)
Masaaki Niwa, Minoru Onoda, Michikazu Matsumoto, Hiroshi Iwasaki and Robert Sinclair
2671-2674 : Electron-Beam Testing of Microwiring Substrates
Matthias Brunner, Ralf Schmid, Reinhold Schmitt, Burkhard Lischke, Mireille Wörner and Nikola Then Bergh
2675-2679 : Fabrication of Free-Standing Single-Crystal Silicon Nanostructures for the Study of Thermal Transport and Defect Scattering in Low Dimensional Systems
A. Potts, D. A. Williams, R. J. Young, R. J. Blaikie, R. A. McMahon, D. G. Hasko, J. R. A. Cleaver and H. Ahmed
2680-2683 : Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
Yuji Horino, Akiyoshi Chayahara, Masato Kiuchi, Kanenaga Fujii, Mamoru Satoh and Mikio Takai

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