Table of Contents

Jpn. J. Appl. Phys. Vol. 32 (1993)
Part 1, No. 6B, 30 June 1993

Special Issue: Scanning Tunneling Microscopy & Dry Process

Scanning Tunneling Microscopy

2911-2913 : First Principles Study of the Effect of Tip Shape on Scanning Tunneling Microscopy Images
Satoshi Watanabe, Masakazu Aono and Masaru Tsukada
2914-2919 : Electronic States of Si(001)2×1-C60 Surface
Tsuyoshi Yamaguchi
2920-2922 : Growth Processes of Si(111)-√3×√3-Ag Studied by Scanning Tunneling Microscope
Hideaki Ohnishi, Itsuo Katayama, Yasuyuki Ohba, Fumiya Shoji and Kenjiro Oura
2923-2928 : Dynamic Observation of Ag Desorption Process on Si(111) Surface by High-Temperature Scanning Tunneling Microscopy
Tomoshige Sato, Takashi Sueyoshi, Shin-ichi Kitamura and Masashi Iwatsuki
2929-2933 : Adsorption of Bismuth on Si(110) Surfaces Studied by Scanning Tunneling Microscopy
Hiroshi Sakama, Akira Kawazu, Takashi Sueyoshi, Tomoshige Sato and Masashi Iwatsuki
2934-2939 : Scanning Tunneling Microscopic Observations of “Nonconductive” Oxide Surfaces: SiO2 Thin Films Formed on n- and p-Si(100)
Masaharu Komiyama, Manabu Kirino and Hiroyuki Kurokawa
2940-2944 : Scanning Tunneling Microscope and Atomic Force Microscope Observation of Topography of Molecular-Beam-Epitaxy-Grown Pt Films on Cu Buffer Layer and Si(111)-(7×7) Substrate
Kouichi Nishikawa, Masahiko Yamamoto, Toshimitsu Kurumizawa and Toshiki Kingetsu
2945-2949 : Characterization of Epitaxial Films of Layered Materials Using Moiré Images of Scanning Tunneling Microscope
Tomohiko Mori, Hideki Abe, Koichiro Saiki and Atsushi Koma
2950-2951 : Cleavage and Intercalation Properties of a Layered Compound, K4Nb6O17·3H2O, Studied with Atomic Force Microscopy
Hitoshi Shindo and Hisakazu Nozoye
2952-2957 : Scanning Tunneling Microscopy and Barrier-Height Observation of Stearic Acid Thin Films Prepared by Hot-Wall Technique
Akira Sasaki, Futoshi Iwata, Akira Katsumata, Jisuke Fukaya, Hisayuki Aoyama, Tetsuo Akiyama, Yoshio Nakano and Hiroshi Fujiyasu
2958-2961 : Imaging of Organic Molecules by Atomic Force Microscopy
Hirofumi Yamada and Kan Nakayama
2962-2964 : Scanning Tunneling and Atomic Force Microscopy of T4 Bacteriophage and Tobacco Mosaic Virus
Kensaku Imai, Kosei Yoshimura, Masahiko Tomitori, Osamu Nishikawa, Ryouhei Kokawa, Mitsuhiko Yamamoto, Masato Kobayashi and Atsushi Ikai
2965-2968 : Atomic Force Microscopy Imaging of Filamentous Aggregates from an N-Terminal Peptide Fragment of Barnase
Teiko Shibata-Seki, Junji Masai, Kenji Yoshida, Kazuki Sato and Hiroshi Yanagawa
2969-2972 : Scanning Tunneling Spectroscopy of Nanofeatures on Silver-Selenide Surface
Yasushi Utsugi
2973-2979 : Application of Atomic Force Microscopy to the Study of Size Fluctuation in E-Beam Patterned Quantum Wire Structures
Masaya Notomi, Masashi Nakao and Toshiaki Tamamura
2980-2982 : Observation of Atomic Defects on LiF(100) Surface with Ultrahigh Vacuum Atomic Force Microscope (UHV AFM)
Masahiro Ohta, Takefumi Konishi, Yasuhiro Sugawara, Seizo Morita, Mineharu Suzuki and Yuji Enomoto
2983-2988 : Atomic Force Microscope Combined with Scanning Tunneling Microscope [AFM/STM]
Seizo Morita, Yasuhiro Sugawara and Yoshinobu Fukano
2989-2993 : Possibility of Observing Spin-Polarized Tunneling Current Using Scanning Tunneling Microscope with Optically Pumped GaAs
Kazuhisa Sueoka, K\=oichi Mukasa and Kazunobu Hayakawa
2994-2998 : Atomic Force Microscope Using an Optical Fiber Heterodyne Interferometer Free from External Disturbances
Takanori Oshio, Noboru Nakatani, Yoshiyuki Sakai and Norihito Suzuki

Dry Process

Etching Process

2999-3006 : Modeling and Simulation of High Density Plasmas
David B. Graves, Hanming Wu and Robert K. Porteous
3007-3012 : Wave Propagation and Plasma Uniformity in an Electron Cyclotron Resonance Plasma Etch Reactor
James E. Stevens and Joseph L. Cecchi
3013-3018 : Al-Cu Alloy Etching Using In-Reactor Aluminum Chloride Formation in Static Magnetron Triode Reactive Ion Etching
Masaaki Sato and Yoshinobu Arita
3019-3022 : Al Etching Characteristics Employing Helicon Wave Plasma
Nobuhiro Jiwari, Hiroaki Iwasawa, Akira Narai, Hiroyuki Sakaue, Haruo Shindo, Tatsuo Shoji and Yasuhiro Horiike
3023-3028 : A Comparison of Cl2 and HBr/Cl2-Based Polysilicon Etch Chemistries: Impact on SiO2 and Si Substrate Damage
John F. Rembetski, Y D. Chan, E. Boden, Tieer Gu, O. O. Awadelkarim, R. A. Ditizio, S. J. Fonash, Xiaoyu Li and C. R. Viswanathan
3029-3034 : Local Electric Field Effect in Reactive Ion Etching
M. Ardehali and H. Matsumoto
3035-3039 : Estimation of Ion Incident Angle from Si Etching Profiles
Yasushi Gotoh, Tokuo Kure and Shin'ichi Tachi
3040-3044 : Radical Kinetics in a Fluorocarbon Etching Plasma
Yukinobu Hikosaka and Hideo Sugai
3045-3050 : Resist and Sidewall Film Removal after Al Reactive Ion Etching (RIE) Employing F+H2O Downstream Ashing
Sadayuki Jimbo, Kouji Shimomura, Tokuhisa Ohiwa, Makoto Sekine, Haruki Mori, Keiji Horioka and Haruo Okano
3051-3057 : Ion-Beam-Assisted Etching in Ga+/GaAs/Cl2 System
Toshihiko Kosugi, Hiroaki Iwase and Kenji Gamo
3058-3062 : Evaluation of Radiation Damage on Electrical Characteristics of SiO2 due to Reactive Ion Etching
Akira Tsukamoto, Kazuyoshi Mizushima, Yoshiharu Hidaka, Hiroyuki Okada and Sumio Terakawa
3063-3067 : Chemical States of Bromine Atoms on SiO2 Surface after HBr Reactive Ion Etching: Analysis of Thin Oxide
Keiji Koshino, Jiro Matsuo and Moritaka Nakamura

Deposition Process

3068-3073 : A Phenomenlogical Study of Particulates in Plasma Tools and Processes
Gary S. Selwyn
3074-3080 : Growth Kinetics and Behavior of Dust Particles in Silane Plasmas
Yukio Watanabe and Masaharu Shiratani
3081-3084 : High-Fluidity Deposition of Silicon by Plasma-Enhanced Chemical Vapor Deposition Using Si2H6 or SiH4
Hidetoshi Shin, Makoto Hashimoto, Katsuhiko Okamoto, Seiichi Miyazaki and Masataka Hirose
3085-3088 : TiN Thin Film Prepared by Chemical Vapor Deposition Method Using Cp2Ti(N3)2
Koichi Ikeda, Masahiko Maeda and Yoshinobu Arita
3089-3093 : Thin Film Deposition by Low Energy SiCln+ Beam
Takayuki Sakai, Akira Sakai and Haruo Okano
3094-3098 : Formation of Single-Crystal Al Interconnection by In Situ Annealing
Jun-ichi Wada, Kyoichi Suguro, Nobuo Hayasaka and Haruo Okano

Photo-Excited Process

3099-3105 : Photodissociation of Trimethylindium and Trimethylgallium on GaAs at 193 nm Studied by Angle-Resolved Photoelectron Spectroscopy
Satoshi Shogen, Masafumi Ohashi, Satoshi Hashimoto, Yutaka Matsumi and Masahiro Kawasaki
3106-3108 : Selective Deposition of Silicon by Mercury Sensitized Photochemical Vapor Deposition
Masato Hiramatsu, Arichika Ishida, Takaaki Kamimura and Yoshito Kawakyu
3109-3112 : High Rate Deposition of Silicon Dioxide Membrane by Excimer Laser Enhanced Projection Chemical Vapor Deposition from Organic Compounds at Low Temperature
Seiichirou Tomoura, Kouji Takashima, Kazuyuki Minami, Masaki Esashi and Jun-ichi Nishizawa
3113-3119 : Photoluminescence and Its Excimer Laser Irradiation Effects in SiO2 Film Prepared by Photo-Induced Chemical Vapor Deposition
Takeshi Kanashima, Masanori Okuyama and Yoshihiro Hamakawa

Surface Reaction Study

3120-3124 : Effects of H2O on Atomic Hydrogen Generation in Hydrogen Plasma
Jun Kikuchi, Shuzo Fujimura, Masafumi Suzuki and Hiroshi Yano
3125-3130 : Fluorine Termination of Silicon Surface by F2 and Succeeding Reaction with Water
Masakazu Nakamura, Takayuki Takahagi and Akira Ishitani
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