Table of Contents

Jpn. J. Appl. Phys. Vol.36(1997)
Part 1, No. 6B, 30 June 1997

Special Issue: Scanning Tunneling Microscopy & Quantum Dot Structures

Scanning Tunneling Microscopy

3791-3795 : Theoretical Study of Silicon Adatom Transfer from the Silicon Surface in Scanning Tunneling Microscopy: Nobuhiko Kobayashi, Kenji Hirose and Masaru Tsukada
3796-3798 : Effects of Coulomb Interaction in Tunneling Current through Several Energy Levels: Takashi Mii , Kenji Makoshi and Nobuyuki Shima
3799-3803 : Theory of Transport Through a Single Atomic Junction: Fumiko Yamaguchi, Dehuan Huang and Yoshihisa Yamamoto
3804-3809 : Structures on Si(100) 2 × 1 at the Initial Stages of Homoepitaxy by SiH₄ Decomposition: Matthias Fehrenbacher, Jürgen Spitzmüller, Michael Pitter, Hubert Rauscher and R. Jürgen Behm
3810-3813 : Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy: Reiko Kuroiwa, Hajime Asahi, Kakuya Iwata, Seong-Jin Kim, Joo-Hyong Noh, Kumiko Asami and Shun-ichi Gonda
3814-3817 : Si(111) 2 × 2-In $\leftrightarrow$ Si(111)$\sqrt{\mbox{\bf 3}} \times \sqrt{\mbox{\bf 3}}$-In Scanning Tunneling Microscope Tip-Induced Structural Transformation: Alexander A. Saranin, Toshinori Numata, Osamu Kubo, Hitoshi Tani, Mitsuhiro Katayama and Kenjiro Oura
3818-3820 : Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices: Joo-Hyong Noh, Hajime Asahi, Seong-Jin Kim and Shun-ichi Gonda
3821-3826 : Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy: Makoto Kasu , Toshiki Makimoto and Naoki Kobayashi
3827-3831 : Nanoscale Indentation on Si(111) Surfaces with Scanning Tunneling Microscope: Ryu Hasunuma, Tadahiro Komeda and Hiroshi Tokumoto
3832-3833 : Fabrication of a Narrow Gold Wire Using Scanning Tunneling Microscopy: Hiroshi Okamoto, Akiko Itakura, Taro Yakabe and Hitoshi Nejoh
3834-3838 : Nanometer-Scale Layer Removal of Aluminum and Polystyrene Surfaces by Ultrasonic Scratching: Futoshi Iwata, Makoto Kawaguchi, Hisayuki Aoyama and Akira Sasaki
3839-3843 : Nano-Fabrication on GaAs Surface by Resist Process with Scanning Tunneling Microscope Lithography: Katsuya Hironaka, Nobuyuki Aoki, Hidenobu Hori and Syoji Yamada
3844-3849 : Sharpening Processes of Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Tips by Thermal Field Treatment: Minoru Nagai, Masahiko Tomitori and Osamu Nishikawa
3850-3854 : Nanorheology of Polymer Blends Investigated by Atomic Force Microscopy: Ken Nakajima, Hideki Yamaguchi, Jeong-Chang Lee, Masami Kageshima, Takayuki Ikehara and Toshio Nishi
3855-3859 : Scanning Auger Electron Microscopy Evaluation and Composition Control of Cantilevers for Ultrahigh Vacuum Atomic Force Microscopy: Toyoko Arai and Masahiko Tomitori
3860-3863 : Barrier-Height Imaging of Oxygen-Adsorbed Si(111) 7× 7 Surfaces: Shu Kurokawa, Mitsuhiro Yuasa, and Akira Sakai and Yukio Hasegawa
3864-3867 : Local Tunneling Barrier Height Imaging on Si(111) Surface: Nobuhiro Horiguchi, Kazunori Yonei and Masahiro Miyao
3868-3871 : Identification of Materials using Direct Force Modulation Technique with Magnetic AFM Cantilever: Shin-ichi Yamamoto, Takao Ishida, Wataru Mizutani, Hiroshi Tokumoto\footnotemark[2] and Hirofumi Yamada
3872-3876 : Atomic Force Microscopy Studies of Erythrocyte Membranes Immobilized by Centrifugation under Aqueous Conditions: Hideki Iwamoto and Nobuyuki Wakayama
3877-3880 : Practical Scan Speed in Atomic Force Microscopy for Live Neurons in a Physiological Solution: Shin Nagayama, Takuro Tojima, Mayumi Morimoto, Shigeo Sasaki, Kazushige Kawabata, Tatsuo Ushiki, Kazuhiro Abe and Etsuro Ito
3881-3886 : Electric Field and Contact Interactions of Tip with Adenine Molecules on $\bf SrTiO_{3}(100)\mbox{-}\sqrt {5}\times \sqrt {5}$ Surfaces: Ryota Akiyama, Takuya Matsumoto, Hiroyuki Tanaka and Tomoji Kawai
3887-3893 : Protein Stretching II^*1: Results for Carbonic Anhydrase: Atsushi Ikai, Keita Mitsui, Yutaka Furutani, Masahiko Hara, John McMurty and Kin Ping Wong
3894-3897 : Surface Superstructures Fluctuating in the Quasi-One-Dimensional Organic Conductor \beta -(BEDT-TTF)₂PF₆ Observed by Scanning Tunneling Microscopy: Masahiko Ishida, Kenji Hata, Takehiko Mori, Keiichi Nakamoto, Masashi Iwatsuki, Ryozo Yoshizaki and Hidemi Shigekawa
3898-3902 : Photo-Induced Structural Transformation on the Surface of Azobenzene Crystals: Keisuke Nakayama, Lei Jiang, Tomokazu Iyoda, Kazuhito Hashimoto and Akira Fujishima
3903-3908 : Surface Molecular Rearrangements on the (0001) Face of C₇₀ Single Crystals: Lei Jiang, Tomokazu Iyoda, Donald A. Tryk, Nobuhiro Kino, Koichi Kitazawa, Akira Fujishima and Kazuhito Hashimoto
3909-3912 : Heat-Induced Phase Separation of Self-Assembled Monolayers of a Fluorocarbon-Hydrocarbon Asymmetric Disulfide on a Au(111) Surface: Takao Ishida, Shin-ichi Yamamoto, Makoto Motomatsu, Wataru Mizutani, Hiroshi Tokumoto, Hirofumi Hokari, Hiroaki Azehara, Masamichi Fujihira and Isao Kojima
3913-3916 : Structural Studies on Phosphatidylcholine Liposomes in Various Phases Using Atomic Force Microscopy: Hideki Iwamoto and Nobuyuki Wakayama

Quantum Dot Structures

Electronic States in Quantum Dots

3917-3923 : Atomic-Like Properties of Semiconductor Quantum Dots: Seigo Tarucha, David Guy Austing, Takashi Honda, Rob van der Hage and Leonardus Petrus Kouwenhoven
3924-3927 : Electronic Structures of Few Electrons in a Quantum Dot under Magnetic Fields: Mikio Eto
3928-3931 : Energy-Dependent Effective Mass Approximation in One-Dimensional Quantum Dots: Norihiko Nishiguchi and Kanji Yoh
3932-3935 : Effect of Quantum Confinement and Lattice Relaxation on Electronic States in GaAs/In_0.2Ga_0.8As/GaAs Quantum Dots: Katsuji Moriyasu, Shinichi Osako, Nobuya Mori and Chihiro Hamaguchi
3936-3940 : Double Quantum Dots as Dissipative Two Level Systems: Tomosuke Aono and Kiyoshi Kawamura
3941-3943 : Existence of a Critical Size in Fully Symmetrical Semiconductor Quantum Dots: Shang Yuan Ren

Transport in Quantum Dots

3944-3950 : Quantum Transport in Single and Multiple Quantum Dots: David K. Ferry, Jonathan P. Bird, Richard Akis, David P. Pivin, Jr., Kevin M. Connolly, Koji Ishibashi, Yoshinobu Aoyagi, Takuo Sugano and Yuichi Ochiai
3951-3955 : Theory of Single Electron Tunneling through a Quantum Dot Dimer: Kiyoshi Kawamura and Tomosuke Aono
3956-3959 : Fundamental Physics of Single Electron Transport: Shun-ichi Kobayashi
3960-3963 : Magnetic Field Effects on Anisotropic Parabolic Quantum Dots: Akiko Natori, Yuichiro Sugimoto and Masamichi Fujito
3964-3967 : Can Ohmic Spikes Define Quantum Systems?: Richard P. Taylor, Richard Newbury, Andrew S. Sachrajda, Yan Feng, Peter T. Coleridge, John P. McCaffrey, Michael Davies and Jonathon P. Bird
3968-3970 : The Role of Electron Phase Coherence in Quantum Transport through Open Ballistic Cavities: Jonathan P. Bird, Adam P. Micolich, Richard Akis, David K. Ferry, Richard Newbury, Richard P. Taylor, Dapsy M. Olatona, Rene Wirtz, Yuichi Ochiai, Koji Ishibashi, Yoshinobu Aoyagi and Takuo Sugano
3971-3973 : Phase Breaking of Coherent Electron Waves in Dot Array Systems: Yuichi Ochiai, A. Wahju Widjaja, Nobuyuki Sasaki, Kazunuki Yamamoto, Jonathan P. Bird, Kohji Ishibashi, Yoshinobu Aoyagi, Takuo Sugano and David K. Ferry
3974-3977 : Aharonov-Bohm Effect in Quantum Dots: Hiroshi Akera
3978-3980 : Charging Effect and Phase Coherence through Parallel Quantum Dots: Shingo Katsumoto and Akira Endo
3981-3985 : Wave Function Scarring in Open Ballistic Quantum Dots: Richard Akis, David K. Ferry and Jonathan P. Bird
3986-3990 : Periodic Conductance Oscillations and Geometrical Commensurability in an Open Ballistic Square: Igor V. Zozoulenko, Ralf Schuster, Karl-Fredrik Berggren and Klaus Ensslin
3991-3995 : Fractal Behavior in the Magnetoresistance of Chaotic Billiards: Richard Newbury, Richard P. Taylor, Andrew S. Sachrajda, Yan Feng, Peter T. Coleridge, Carl Dettmann and T. Mark Fromhold
3996-3999 : Transport Properties of a Triangular Electron Billiard: P. Omling, H. Linke, L. Christensson and P. E. Lindelof
4000-4003 : Multiple Photon Assisted Tunneling between Two Coupled Quantum Dots: Toshimasa Fujisawa and Seigo Tarucha
4004-4007 : Nonequilibrium Transport Properties through Parallel Quantum Dots: Mikio Eto
4008-4012 : Tunneling Transfer and Energy Relaxation Rate of Photo-Excited Carriers in Coupled Quantum Wells: Nobuhiko Sawaki, Noritaka Anzai, Tsutomu Murakami, Masahito Yamaguchi, Takeshi Ikeda and Masatoshi Taya
4013-4015 : Atomic-Scale Negative Differential Conductance Observed at \tbiB -Type Surface Steps on the Si(001)-2×1 Surface: Takuji Komura, Masamichi Yoshimura and Takafumi Yao
4016-4019 : Normal-Super-Normal Junction Fabricated in a Split-Gate Wire: Nobuyuki Aoki, Tomoyuki Kikutani, Akio Oki, Chulun Hon, Hidenobu Hori and Syoji Yamada
4020-4021 : Gate Voltage Dependence of the Resistance of a Two-Dimensional Array of Small Tunnel Junctions: Hideto Kazawa, Ryuta Yagi, Keiji Ono, Youiti Ootuka and Shun-ichi Kobayashi
4022-4024 : Magnetoresistance in a Superconducting Single-Electron Transistor with a Multiply Connected Coulomb Island: Hideki Sato, Mitsuru Kimura and Singo Katsumoto

Nanofabrication Technology and Characterization

4025-4030 : Interface Characterization of Semiconductor Quantum Nanostructures: Klaus H. Ploog
4031-4034 : Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma: Toru Ifuku, Masanori Otobe, Akira Itoh and Shunri Oda
4035-4037 : Creation of Highly-Ordered Si Nanocrystal Dots Suspended in SiO₂ by Molecular Beam Epitaxy with Low Energy Oxygen Implantation: Yukari Ishikawa, Noriyoshi Shibata and Susumu Fukatsu
4038-4041 : Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing: Amit Dutta, Masao Kimura, Yoshiaki Honda, Masanori Otobe, Akira Itoh and Shunri Oda
4042-4045 : Atomic-Layer Surface Reaction of SiH₄ on Ge(100): Takeshi Watanabe, Masao Sakuraba, Takashi Matsuura and Junichi Murota
4046-4048 : Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation: Hiroki Kondo, Hirotaka Iwano, Osamu Nakatsuka, Kazutaka Kaga, Shigeaki Zaima and Yukio Yasuda
4049-4052 : Proposal of a Micro-Fabrication Process for Al Nanostructures: Tadatsugu Hoshino, Nobuyuki Enomoto, Kaori Okano and Minoru Tsuda
4053-4056 : Construction of Semiconductor Nanoparticle Layers on Gold by Self-Assembly Technique: Takuya Nakanishi, Bunsho Ohtani and Kohei Uosaki
4057-4060 : Atomic Force Microscope Nanolithography on SiO₂/Semiconductor Surfaces: Adrian Avramescu, Katsuhiro Uesugi and Ikuo Suemune
4061-4064 : Nanostructure Fabrication Using Selective Growth on Nanosize Patterns Drawn by a Scanning Probe Microscope: Kentaro Sasaki, Keiji Ueno and Atsushi Koma
4065-4067 : Atomic Force Microscope Nanofabrication of InAs/AlGaSb Heterostructures: Shigehiko Sasa, Takatoshi Ikeda, Chiaki Dohno and Masataka Inoue

Self-Organized Formation of Quantum Dots

4068-4072 : Size Quantization and Zero Dimensional Effects in Self Assembled Semiconductor Quantum Dots: Pierre M. Petroff, Klaus H. Schmidt , Gilberto Medeiros Ribeiro, Axel Lorke and Jorg Kotthaus
4073-4077 : Magnetotunnelling and Photoluminescence Spectroscopy of Self-Assembled InAs Quantum Dots: Igor E. Itskevich, Thomas Ihn, Andrew Thornton, Mohamed Henini, Humberto de Andrade Carmona, Laurence Eaves, Peter Clifford Main, Duncan Kennedy Maude and Jean-Claude Portal
4078-4083 : Formation of High-Density Quantum Dot Arrays by Molecular Beam Epitaxy: Mitsuo Kawabe, Yong Jin Chun, Sigeru Nakajima and Kouichi Akahane
4084-4087 : High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots: Anton A. Darhuber, Vaclav Holy, Julian Stangl, Günther Bauer, Alois Krost, Marius Grundmann, Dieter Bimberg, V. M. Ustinov, P. S. Kop'ev, A. O. Kosogov and P. Werner
4088-4091 : Artificial Control of Dot Sites for Ga Droplet Arrays on CaF₂ Films by Surface Steps and Electron Beam Modifications: Kazuya Uejima, Jun Takeshita, Koji Kawasaki and Kazuo Tsutsui
4092-4096 : Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy: Hajime Fujikura, Moriaki Araki, Yuuki Hanada, Michio Kihara and Hideki Hasegawa
4097-4101 : Self-Organized CdSe Quantum Dots on (100)ZnSe/GaAs Surfaces Grown by Metalorganic Molecular Beam Epitaxy: Munetaka Arita, Adrian Avramescu, Katsuhiro Uesugi, Ikuo Suemune, Takahiro Numai, Hideaki Machida and Norio Shimoyama
4102-4106 : Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates: Tomoko Tsujikawa , Wugen Pan , Keishi Momma, Masahiro Kudo, Kunio Tanaka, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
4107-4110 : Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition: Igor V. Kochnev, Nikolai N. Ledentsov, Mikhail V. Maximov, Andrew F. Tsatsul'nikov, Alexey V. Sakharov, Boris V. Volovik, Petr S. Kop'ev, Zhores I. Alferov, Dieter Bimberg, Alexander O. Kosogov, Sergey S. Ruvimov, Peter Werner and Ulrich Gösele
4111-4117 : A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A--Quantum Dots and Two-Dimensional Modes: B. A. Joyce, J. L. Sudijono, J. G. Belk, H. Yamaguchi, X. M. Zhang, H. T. Dobbs, A. Zangwill, D. D. Vvedensky and T. S. Jones
4118-4122 : Control of InAs Self-Assembled Islands on GaAs Vicinal Surfaces by Annealing in Gas-Source Molecular Beam Epitaxy: Hong-Wen Ren, Kenichi Nishi, Shigeo Sugou, Mitsuru Sugisaki and Yasuaki Masumoto
4123-4128 : Lateral Positioning and Vertical Stacking of InAs Islands on GaAs Substrates: Designing Quantum Transport Devices: Mark S. Miller
4129-4133 : InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition: Frank Heinrichsdorff, Alois Krost, Nils Kirstaedter, Ming-Hua Mao, Marius Grundmann, Dieter Bimberg, Alexander Olegovich Kosogov and Peter Werner
4134-4138 : Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure: Kanji Yoh, Jun Konda, Sanshiro Shiina and Norihiko Nishiguchi

Novel Single Electron Devices

4139-4142 : Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor: Toshiro Hiramoto, Hiroki Ishikuro, Tomoyuki Fujii, Gen Hashiguchi and Toshiaki Ikoma
4143-4146 : Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices: Yoshinari Matsumoto, Taturo Hanajiri, Tohru Toyabe and Takuo Sugano
4147-4150 : Single-Electron Transistor in Silicon-on-Insulator with Schottky-Contact Tunnel Barriers: Hironobu Fukui, Minoru Fujishima and Koichiro Hoh
4151-4155 : Vertical Single Electron Transistors With Separate Gates: David Guy Austing, Takashi Honda and Seigo Tarucha
4156-4160 : Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires: Hiroshi Okada, Seiya Kasai, Hajime Fujikura, Tamotsu Hashizume and Hideki Hasegawa
4161-4165 : Single-Electron-Tunneling Effect in Nanoscale Granular Microbridges: Nobuyuki Yoshikawa, Hideki Kimijima, Norihiro Miura and Masanori Sugahara
4166-4171 : Correlated Electron-Hole Transport in Capacitively-Coupled One-Dimensional Tunnel Junction Arrays: Shuhei Amakawa, Minoru Fujishima and Koichiro Hoh
4172-4175 : A Single Electron Neuron Device: Masaharu Kirihara and Kenji Taniguchi
4176-4180 : Simulations of Relaxation Processes for Non-Equilibrium Electron Distributions in Two-Dimensional Tunnel Junction Arrays: Michiharu Tabe, Noboru Asahi, Yoshihito Amemiya and Yoichi Terao

Optical Properties and Quantum Dot Lasers

4181-4187 : Gain and Threshold of Quantum Dot Lasers: Theory and Comparison to Experiments: Marius Grundmann and Dieter Bimberg
4188-4190 : Spectroscopy, Imaging and Switching Behaviour of Individual InP/GaInP Quantum Dots: Pedro Castrillo, Dan Hessman, Mats-Erik Pistol, Jose Antonio Prieto, Craig Pryor and Lars Samuelson
4191-4193 : Observation of Excited Biexciton States in CuCl Quantum Dots: Control of the Quantum Dot Energy by a Photon: Michio Ikezawa and Yasuaki Masumoto
4194-4198 : Dephasing Processes in Self-Organized Strained InGaAs Single-Dots on (311)B-GaAs Substrate: Hidehiko Kamada, Jiro Temmyo, Masaya Notomi, Tomofumi Furuta and Toshiaki Tamamura
4199-4203 : Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy: Hiroyuki Nashiki, Ikuo Suemune, Hideki Suzuki and Katsuhiro Uesugi
4204-4208 : Effects of Dimensionality on Radiative Recombination Lifetime of Excitons in Thin Quantum Boxes of Intermediate Regime between Zero and Two Dimensions: Hideki Gotoh, Hiroaki Ando, Toshihide Takagahara, Hidehiko Kamada, Arturo Chavez-Pirson and Jiro Temmyo
4209-4211 : Collective Superradiation Effects in InGaAsP/InP Liquid Phase Epitaxy-Grown Quasi-0-Dimentional Nanostructures: Sergy V. Zaitsev and Anatoly M. Georgievski
4212-4215 : Observation of Excited State Excitons in CuCl Quantum Cubes: Naru Sakakura and Yasuaki Masumoto
4216-4218 : Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser: Alexey E. Zhukov, Victor M. Ustinov, Anton Yu. Egorov, Alexey R. Kovsh, Andrey F. Tsatsul\`nikov, Nikolay N. Ledentsov, Sergey V. Zaitsev, Nikita Yu. Gordeev, Peter S. Kopèv and Zhores I. Alferov
4219-4220 : Vertically Coupled Quantum Dot Lasers: First Device Oriented Structures with High Internal Quantum Efficiency: Sergey V. Zaitsev, Nikita Yu. Gordeev, Vladimir I. Kopchatov, Victor M. Ustinov, Alexy E. Zhukov, Anton Yu. Egorov, Nikolay N. Ledentsov, Mikhail V. Maximov, Peter S. Kop'ev, Alexander O. Kosogov and Zhores I. Alferov
4221-4223 : InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T₀= 385 K) Grown by Metal Organic Chemical Vapour Deposition: Mikhail V. Maximov, Igor V. Kochnev, Yuri M. Shernyakov, Sergei V. Zaitsev, Nikita Yu. Gordeev, Andrew F. Tsatsul'nikov, Alexey V. Sakharov, Igor L. Krestnikov, Petr S. Kop'ev, Zhores I. Alferov, Nikolai N. Ledentsov, Dieter Bimberg, Alexander O. Kosogov, Peter Werner and Ulrich Gösele

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