Table of Contents

Jpn. J. Appl. Phys. Vol.37(1998)
Part 1, No. 10, 15 October 1998

Invited Review Paper

5425-5436 : Overview of Silicon-Based Materials^*: Nobuo Matsumoto

Semiconductors

5437-5443 : Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect Transistors: Hiroshi Goto, Seiichiro Yamaguchi and Christoph Jungemann
5444-5450 : Slip Length in Silicon Wafers Caused by Indentation during Heat Treatment: Masanori Akatsuka, Koji Sueoka, Hisashi Katahama, Nobuyuki Morimoto and Naoshi Adachi
5451-5456 : Slow Carrier Relaxation among Sublevels in Annealed Self-Formed InGaAs/GaAs Quantum Dots: Kohki Mukai and Mitsuru Sugawara
5457-5464 : Thermoelastic Analysis of Slip Defect Generation on GaAs Wafers: Shin-ichi Sawada, Hikari Yoshida, Makoto Kiyama and Ryusuke Nakai
5465-5469 : Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition: Wei-Chi Lai, Chun-Yen Chang, Meiso Yokoyama, Jen-Dar Guo, Jian-Shihn Tsang, Shih-Hsiung Chan, Jong-Shing Bow, Sun-Chin Wei, Ray-Hua Hong and Simon M. Sze
5470-5473 : Change of Spin-Lattice Relaxation Time with Light Soaking for Defects in Hydrogenated Amorphous Silicon: Tatsuo Shimizu, Kazuhiro Kata, Masahiro Mitani and Minoru Kumeda
5474-5479 : Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing: Chang-Ho Oh and Masakiyo Matsumura
5480-5484 : Optoelectronic and Structural Properties of Good Quality Hydrogenated Amorphous Silicon Carbide Films Deposited by Hot Wire Assisted RF Plasma Deposition Technique: S. Chattopadhyay, Debabrata Das, A. K. Barua, D. L. Williamson and S. T. Kshirsagar
5485-5489 : Infrared Absorption Properties of Nanocrystalline Cubic SiC Films: Yong Sun and Tatsuro Miyasato
5490-5492 : Ultrafast Relaxation of Photoexcited Carriers in Semiconductor Superlattices: Koo-Chul Je and Yup Kim
5493-5496 : Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots: Ken-ichi Shiramine, Yasunobu Horisaki, Dai Suzuki, Satoru Itoh, Yoshiki Ebiko, Shunichi Muto,Yoshiaki Nakata and Naoki Yokoyama
5497-5499 : Heteroepitaxy and Multiquantum Well Structure of Layered Compound GaSe/GaS_xSe_1-x on (001)GaAs Substrate: Maman Budiman, Tamotsu Okamoto, Akira Yamada and Makoto Konagai
5500-5502 : Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition: Koichi Maezawa, Jiro Osaka, Haruki Yokoyama and Masafumi Yamamoto
5503-5506 : Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope: Hidetoshi Koike, Toshiyuki Enda, Fumitomo Matsuoka and Naoyuki Shigyo
5507-5509 : Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N₂O Nitrided Gate Oxide and N₂O Polysilicon Gate Reoxidation: Chao Sung Lai, Tien Sheng Chao, Tan Fu Lei, Chung Len Lee, Tiao Yuan Huang and Chun Yen Chang
5510-5514 : Degradation Modes of InGaAs p-n Diodes Operated at Forward Biases: Yoshinori Wada and Takatomo Enoki
5515-5518 : Effects of Ni Silicidation on the Shallow p⁺n Junctions Formed by BF₂⁺ Implantation into Thin Polycrystalline-Si Films on Si Substrates: Miin-Horng Juang, Sui-Chan Han and Man-Chun Hu
5519-5525 : Precise Control and Resizing of Polysilicon Gate Length by Hard-Mask Etching: Masaaki Sato and Yoshio Kawai
5526-5532 : A Fully Integrated Aluminum Dual Damascene Process Using a New Double Stopper Structure: Minakshisundaran B. Anand, Naofumi Nakamura, Jun-ichi Wada, Yasushi Oikawa, Tomio Katata, Katsuyasu Shiba and Hideki Shibata
5533-5534 : Noise Current Induced by Switching of a Dielectric Isolated Lateral Insulated Gate Bipolar Transistor on Silicon-on-Insulator: Hitoshi Sumida and Atsuo Hirabayashi

Superconductors

5535-5539 : Anisotropy in Magnetic Hysteresis of BSr₂Ca_n-1Cu_nO_2n+3 (n=3, 4, 5) Superconductors: Shan Yu, Tetsuya Kawashima, Yoshishige Uchida and Eiji Takayama-Muromachi
5540-5543 : Effects of Grain Boundaries on Temperature Dependence of Microwave Surface Resistance of YBa₂Cu₃O_7-x Thin Films: Mazwi Ben Tunyiswa, Kensuke Nakajima, Jian Chen, Sang-Jae Kim, Huabing Wang and Tsutomu Yamashita

Magnetism

5544-5548 : Crystal Growth and Magnetic Properties of SmFe₂: Hiroaki Samata, Nobuto Fujiwara, Yujiro Nagata, Takayuki Uchida and Ming Der Lan
5549-5553 : Ferroelectric Properties of SrBi₂Ta₂O₉ Thin Films Deposited on Various Bottom Electrodes by a Modified Radio-Frequency Magnetron Sputtering Technique: Cheol-Hoon Yang, Woong-Chul Shin, Eun-Suck Choi, Jun-Sik Hwang,Soon-Gil Yoon, Won-Youl Choi and Ho-Gi Kim
5554-5559 : Numerical Study of Magnetoresistance in Ferromagnetic Tunnel Junctions: Hiroyoshi Itoh,Takao Kumazaki, Jun-ichiro Inoue and Sadamichi Maekawa

Optics and Quantum Electronics

5560-5568 : Analysis of Spherical Target Illumination with Partially Coherent Light through Random Phase Plate: Kouji Tsubakimoto, Masahiro Nakatsuka, Noriaki Miyanaga and Takahisa Jitsuno
5569-5571 : Transverse-Mode Effect of Second-Harmonic Generation of Ultrashort Laser Pulses with Time Delay: Tiejun Zhang and Motoki Yonemura
5572-5577 : Optical Nonlinearities of Bis(4-dimethylaminodithiobenzil)-nickel Solution in the Nanosecond Regime: Hongpu Li and Kazuhiko Ogusu
5578-5581 : Alternative Interpretation of Impulse Response of Phonon-Polaritons: Hitoshi Kawashima, Fumio Sasaki, Shunsuke Kobayashi and Toshiro Tani
5582-5587 : Waveguiding Epitaxial Potassium Lithium Niobate Single-Crystal Films Deposited by Metalorganic Chemical Vapor Deposition: Kiyofumi Chikuma, Atsushi Onoe and Ayako Yoshida
5588-5592 : Electro-Optic Intensity Modulator Using a Novel Urethane-Urea Copolymer: Osamu Watanabe, Masaaki Tsuchimori, Akane Okada and Hiroshi Ito
5593-5597 : Development of Planar Optics for an Optical Tracking Sensor: Hiroyuki Kawano and Tomohiro Sasagawa
5598-5603 : An Improved Method for Wind Measurements with a Conical-Scanning Correlation Lidar: Nobuo Sugimoto, Ichiro Matsui, Mego Pinandito, Takakazu Ishii,Shigeru Murata and Noboru Yasuda
5604-5608 : Fabrication of Lens Rasters Using a Laser Beam Scanning Method: Hyung-Wook Jeon, Hyuk-Soo Lee, Jung-Young Son, Vadim V. Smirnov,Yong-Jin Choi and You-Seek Chun

Optical Properties of Condensed Matter

5609-5613 : Optical Absorption Properties of Indium-Doped Thin Crystalline Silicon Films: Hiroto Kasai and Hideki Matsumura
5614-5617 : Optical and Electrical Properties of Sn-doped Indium Oxide Films Deposited on Polyester by Reactive Evaporation: Jin Ma, Dehang Zhang, Shuying Li, Junqing Zhao and Honglei Ma
5618-5619 : Piezooptic Behaviour of Li₂Ge₇O₁₅ Crystals: A. K. Bain, K. Veerabhadra Rao, Prem Chand, Toshihisa Yamaguchi and Mitsuo Wada
5620-5621 : Image-Charge and Excitonic Effects on the Oscillator Strength of Silicon Quantum Dots: Masao Iwamatsu

Electrical Properties of Condensed Matter

5622-5624 : Thermal Properties of InAs_0.86Sb_0.05P_0.09 Homostructure Diodes: Lung-Chien Chen, Meng-Chyi Wu and Wen-Jeng Ho
5625-5629 : Dielectric Behavior of (1-x)LaAlO₃-xSrTiO₃ Solid Solution System at Microwave Frequencies: Pai-hsuan Sun,Tetsuro Nakamura, Yue Jin Shan, Yoshiyuki Inaguma, Mitsuru Itoh and Toshiki Kitamura
5630-5633 : Imprint of Oriented Pb(Zr, Ti)O₃ Thin Films with Oxygen Atmosphere in Cooling Process: Hee-Soo Lee, Keun-Ho Auh, Min-Seok Jeon, Woo-Sik Um, In-Shik Lee, Gwang-Pyo Choi and Ho-Gi Kim
5634-5637 : Temperature Dependence of Piezoelectric, Dielectric, and Elastic Properties of Lead Lanthanum Zirconate Titanate Ceramics: Vid Bobnar, Zdravko Kutnjak andAdrijan Levstik
5638-5644 : Structural and Electrical Characteristics of Ba(Zr_0.12Ti_0.88)O₃ Thin Films Deposited on LaNiO₃ Electrode by RF Magnetron Sputtering: Hsiou-Jeng Shy and Tai-Bor Wu
5645-5650 : Dielectric Properties of PbTiO₃ Thin Films on CeO₂/Si(100) and Y₂O₃/Si(100): Ye-Min Wu and Jyi-Tsong Lo
5651-5654 : Effects of Ambient Gas on Dielectric Constant of Sputtered SrTiO₃ Epitaxial Thin Films: Shuichi Komatsu, Kazuhide Abe and Noburu Fukushima
5655-5658 : Determination of Dielectric Relaxation Time of Langmuir-Films by a Whole-Curve Method Using the Maxwell Displacement Current: Yoko Sato, Chen-Xu Wu, Yutaka Majima and Mitsumasa Iwamoto
5659-5662 : An Ultrasonic Motor Using a Metal-Ceramic Composite Actuator Generating Torsional Displacement: Burhanettin Koc, Aydin Dogan, Yuan Xu, Robert E. Newnham and Kenji Uchino

Structure and Mechanical and Thermal Properties of Condensed Matter

5663-5668 : Thermal and Optical Stabilities of Photoisomerizable Polyimide Layers for Nematic Liquid Crystal Alignments: Byoungchoo Park, Youngyi Jung, Hyun-Hee Choi, Ha-Keun Hwang, Youngkyoo Kim, Sooman Lee, Sei-Hum Jang, Masa-aki Kakimoto and Hideo Takezoe
5669-5673 : An Optical Sensing System Using Liquid Crystal Cells and a Corner Cube Prism Coated with Dye Films for Simultaneous Detection of an Electric Field and Decomposition Products of SF₆: Marenori Kawamura and Susumu Sato
5674-5679 : Growth and Evaluation of Cd_1-yZn_yTe Epilayers on (100) GaAs Substrates by Hot Wall Epitaxy: Bonheun Koo, Jifeng Wang, Yukio Ishikawa and Minoru Isshiki
5680-5686 : Neutron Diffraction Measurements of Inner Local Strain of Fatigued Carbon Steel: Kazuko Inoue, Takeshi Horikawa, Hiroshi Nakamura, Toshiaki Arai, Nobuaki Minakawa, Yoshinori Tsuchiya, Yukio Morii and Yasuo Yamaguchi
5687-5690 : Soft Modes Responsible for \alpha -\beta and \beta -\gamma Phase Transitions of KIO₃ Crystals: Muhtar Ahart, Seiji Kojima, Masayoshi Takagi, Masaki Maeda and Ikuo Suzuki
5691-5696 : Formation of F- and P-Type Icosahedral Quasicrystals in the Zn-Mg-Ho Alloy System^*: Takayuki Shimizu and Tsutomu Ishimasa

Surfaces, Interfaces, and Films

5697-5700 : Surface Structure of N/Pd(100)-c(2×2) Determined by Tensor Low Energy Electron Diffraction Analysis: Tomoyuki Kayama, Hiroshi Hamamatsu, Toshihiko Yokoyama and Toshiaki Ohta
5701-5707 : Ru Electrode Deposited by Sputtering in Ar/O₂ Mixture Ambient: Tomonori Aoyama, Atsushi Murakoshi and Keitaro Imai
5708-5713 : Physical Properties of Heavily B-doped Microcrystalline Si-Ge Alloys and Schottky Barrier of B-Si-Ge/P-Si: Yukio Osaka, Kenji Kohno and Yukiya Tanabe
5714-5718 : Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process: Hideto Yanagisawa, Katsutaka Sasaki, Yoshio Abe, Midori Kawamura and Satoko Shinkai
5719-5725 : Monte Carlo Simulation of Emission Efficiency of Cone-shaped Metal-Insulator-Semiconductor Cathode: Kazunori Inoue, Yasuhito Gotoh, Yoshikazu Fujimori, Masayoshi Nagao, Shinji Sadakane, Hiroshi Tsuji and Junzo Ishikawa
5726-5727 : Evaluation of Free Energy on Si(110) Surface: Youiti Yamamoto
5728-5729 : Raman Scattering Studies of CuInS₂ Films Grown by RF Ion Plating: Ken-ichi Kondo, Susumu Nakamura and Katsuaki Sato

Nuclear Science, Plasmas, and Electric Discharges

5730-5734 : Positive Ions in RF Discharge Plasmas of C₄F₈/Ar and C₄F₈/O₂ Mixtures: Yuji Hirose, Itsuo Ishikawa, Shinya Sasaki, Kazuya Nagaseki, Yukinori Saito and Shinji Suganomata
5735-5741 : Hollow Density Profile on Electron Cyclotron Resonance Heating JFT-2M Plasma: Toshihiko Yamauchi, Katsumichi Hoshino, Hisato Kawashima, Toshihide Ogawa,Tomohide Kawakami, Tomio Shiina and Youichi Ishige
5742-5745 : Microwave Plasma in a Multicusp Circular Waveguide with a Dimension below Cutoff: Sudeep Bhattacharjee and Hiroshi Amemiya
5746-5750 : High-Density Plasma Produced by a Holey-Plate Surface-Wave Structure Cavity: Yoshikazu Yoshida and Takeki Sakurai
5751-5756 : Concentric Spread Plasma Source: Seiichi Watanabe, Masahiro Sumiya and Sunao Kawasaki
5757-5762 : Transition of Particle Growth Region in SiH₄ RF Discharges: Hiroharu Kawasaki, Kazutaka Sakamoto, Shinichi Maeda, Tsuyoshi Fukuzawa,Masaharu Shiratani and Yukio Watanabe
5763-5766 : Surface Kinetics of CF_x Radicals and Fluorine Atoms in the Afterglow of High-Density C₄F₈ Plasmas: Chihiro Suzuki, Koichi Sasaki and Kiyoshi Kadota

Atoms, Molecules, and Chemical Physics

5767-5771 : Determination of Collisional Quenching Rate for the 4D_3/2 State in SrII: Iku Hirano, Jun Yoda, Feng-Lei Hong, Kenichiro Okumura and Atsushi Onae
5772-5774 : Velocity Distribution Measurements of a Supersonic Methane Molecular Beam Reflected from a Pt(111) Surface at Various Reflection Angles: Shinjiro Yagyu, Hisae Kita, Yasunobu Kino, Kouta Ozeki, Masahiro Sasaki and Shigehiko Yamamoto
5775-5780 : Electronic State Distributions of He(ns, np, nd) Rydberg States Produced from Three-Body Collisional Radiative Recombination of He⁺ in a Helium Flowing Afterglow: Masaharu Tsuji, Masafumi Nakamura, Erika Oda, Masahiro Hisano and Yukio Nishimura
5781-5785 : Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193 nm Lithography II: Protection Groups Containing an Adamantyl Unit: Nobuyuki N. Matsuzawa, Satoshi Takechi, Takeshi Ohfuji, Koichi Kuhara, Shigeyasu Mori, Masayuki Endo, Kazuya Kamon, Taku Morisawa, Atsuko Yamaguchi and Masaru Sasago
5786-5788 : Comparison of Copper and Stainless Steel Used for Low Voltage Electrode in Wire-to-Plane Electrode Configuration for NO_x Treatment: Robert Gasparik, Chobei Yamabe, Satoshi Ihara and Saburoh Satoh
5789-5792 : Effects of Doping of Fullerene Derivative in a Self-Assembled Multilayer of Conducting Polymers: Tsuyoshi Kawai, Takahiro Yamaue, Mitsuyoshi Onoda and Katsumi Yoshino
5793-5797 : Determination of the Anisotropic Optical Constant of Evaporated Polydiacetylene-C₄UC₄ Films at 632.8 nm: Tatsuo Hasegawa, Toshihiro Okamoto, Masanobu Haraguchi, Masuo Fukui, Takao Koda and Kenji Takeda
5798-5799 : A Solid-State Electrochemical Device Using Poly(pyrrole) as Micro-actuator: Katsumi Yamada, Yuichiro Kume and Hiroshi Tabe

Instrumentation, Measurement, and Fabrication Technology

5800-5807 : Noncontact Measurement of Doping Profile for Bare Silicon: Motohiro Kohno, Hideaki Matsubara, Hiroshi Okada, Sadao Hirae and Takamasa Sakai
5808-5814 : Evaluation of Cu and Pb Particles with Different Sizes as Regenerator Materials in the Gifford-McMahon-Cycle Refrigerator: Tetsushi Biwa, Hiroshi Ikuta and Uichiro Mizutani
5815-5820 : A Fast Method of Simulating Resist Pattern Contours Based on Mean Inhibitor Concentration: Hiroyuki Kubota, Akemi Moniwa and Tsuneo Terasawa
5821-5822 : X-Ray Fluorescence Analysis by Multiple-Glancing X-Ray Beam Excitation: Kouichi Tsuji, Tasaku Sato, and Kazuaki Wagatsuma

General Physics

5823-5834 : Thermo-Flow Structure and Epitaxial Uniformity in Large-Scale Metalorganic Chemical Vapor Deposition Reactors with Rotating Susceptor and Inlet Flow Control: Chyi-Yeou Soong, Chung-Hsing Chyuan and Ruey-Yau Tzong
5835-5838 : Plural Sonoluminescing Bubbles in Acoustic Fields of Higher Mode: Takao Kokubun, Shigeo Hayashi, Qian Han, and Tomoo Kamakura

Cross-Disciplinary Areas

5839-5841 : Solution of the Knapsack Problem by Deoxyribonucleic Acid Computing: Yohei Aoi,Tatsuo Yoshinobu, Katsuyuki Tanizawa,Kozo Kinoshita and Hiroshi Iwasaki

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