Jpn. J. Appl. Phys. 30 (1991) pp. 1313-1319 |Next Article| |Table of Contents|
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Thermal Analysis of a New High Density Package Cooling Technology Using Low Melting Point Alloys
Yoshitaka Fukuoka and
Masaru Ishizuka1
Advanced Hybrid IC Engineering Section, Hybrid IC Engineering Department, Printed Circuit Board & Module Division, Toshiba Corporation, Saiwai-ku, Kawasaki 210
1Fluid Thermal Engineering Group, Mechanical Engineering Laboratory, Toshiba R & D Center, Toshiba Corporation, Kawasaki-ku, Kawasaki 210
(Received October 8, 1990; accepted for publication April 20, 1991)
This paper describes one of the new package cooling technology concepts using a phase changing material (PCM) which would help develop high density packaging. A low cost alloy, composed of Bi/Pb/Sn/In whose melting point is 57°C, was used as the PCM.
Thermal experiments using the abovementioned alloy had been studied by the authors.1) It was confirmed that the substrate back surface temperature could be fixed at the PCM's melting temperature for several minutes by thermal absorption, while the PCM phase changed from its original solid state into the liquid state. Also, in the present work, it has been confirmed that thermal network method is practically useful using a personal computer for the thermal design of a package with a PCM.
KEYWORDS:
package cooling technology, chip junction temperature, thermal conductivity, specific heat, thermal resistance, thermal capacitance, melting point, latent heat, natural convection, thermal radiation
URL:
http://jjap.ipap.jp/link?JJAP/30/1313/
DOI: 10.1143/JJAP.30.1313
References
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