Jpn. J. Appl. Phys. 32 (1993) pp. 362-367  |Next Article|  |Table of Contents|
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Effect of Gate Materials on Generation of Interface State by Hot-Carrier Injection

Hideaki Matsuhashi and Satoshi Nishikawa

(Received September 16, 1992; accepted for publication November 21, 1992)

The effect of gate materials on hot-carrier degradation, especially on the generation of the interface state, is investigated. The generation of the interface state in n-channel metal-oxide-semiconductor field-effect transistors (NMOSFET's) by drain avalanche hot-carrier (DAHC) injection is independent of the gate material. On the other hand, the generation of the interface state in p-channel MOSFET's (PMOSFET's) by DAHC injection is greatly dependent on the gate material but almost independent of the channel doping profile, in other words, a surface- or buried-channel device. The increase in interface state density (ΔD_it) in tungsten (W)-gate PMOSFET's is much larger than that of polycide-gate devices. In order to verify the effect of carrier species injected into SiO₂, electrons were injected from the substrate into the gate electrode by two methods: Fowler-Nordheim injection and hot-electron injection from the forward biased p-n junction injector. The large ΔD_it in W-gate devices is observed in both methods. It is confirmed that the large ΔD_it in W-gate PMOSFET's stressed by DAHC injection is caused by the injection of electrons into SiO₂. These phenomena are considered to occur due to the difference of hole injection from the gate into SiO₂, excited at the gate by electron injection, between gate materials.

KEYWORDS: gate material, hot carrier, interface state generation, tungsten, electron injection, surface-plasmon model
URL: http://jjap.ipap.jp/link?JJAP/32/362/
DOI: 10.1143/JJAP.32.362

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