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Jpn. J. Appl. Phys. 33 (1994) pp. 1484-1488  |Next Article|  |Table of Contents|
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Deposition Profile of RF-Magnetron-Sputtered BaTiO3 Thin Films

Nam-Yang Lee, Tomoyuki Sekine, Yukio Ito1 and Kenji Uchino2

Department of Physics, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102 1Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185 2Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802, USA

(Received September 29, 1993; accepted for publication January 22, 1994)

BaTiO3 thin films were fabricated using an rf-magnetron sputtering technique and an oxide target. In spite of depositing on an amorphous fused quartz substrate, the preferentially oriented thin films were obtained without any post-annealing process. The preferred orientation of the thin films changed with sputtering gas pressure, gas composition and substrate temperature. At a lower gas pressure, the thin films crystallized well and preferentially oriented to the [100] direction. With increasing gas pressure, the preferred orientation changed to (110). On the other hand, at a lower substrate temperature or higher argon partial pressure, the preferred orientation changed to (111). The variation of the preferred orientation, lattice constant, and crystallite size with sputtering conditions was explained by assuming a thermal-vibration model.

KEYWORDS: rf-magnetron sputtering, BaTiO3 film, thermalization, interionic distance, thermal vibration
URL: http://jjap.ipap.jp/link?JJAP/33/1484/
DOI: 10.1143/JJAP.33.1484


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