Jpn. J. Appl. Phys. 34 (1995) pp. 3382-3387  |Next Article|  |Table of Contents|
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Metrology of Atomic Force Microscopy for Si Nano-Structures

Masao Nagase, Hideo Namatsu, Kenji Kurihara, Kazumi Iwadate and Katsumi Murase

(Received December 29, 1994; accepted for publication February 18, 1995)

A new, practical metrological method for atomic force microscopy (AFM) is proposed to determine the dimensions of Si nano-structures. In this method, the AFM image profile is expressed as a modeling equation which includes the critical dimensions of the sample and the tip. The dimensions are obtained from part of the measured AFM image as fitting parameters of the equation. It is demonstrated that the critical dimensions of the sample and the tip obtained by this method agree well with those measured by scanning electron microscopy in the nanometer range.

KEYWORDS: atomic force microscopy, Si nano-structure, critical dimension measurement, metrological method, electron beam lithography, anisotropic wet etching, rectangular cross-section
URL: http://jjap.ipap.jp/link?JJAP/34/3382/
DOI: 10.1143/JJAP.34.3382

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