Jpn. J. Appl. Phys. 34 (1995) pp. 6019-6020  |Next Article|  |Table of Contents|
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Examination of Correlation of Surface Morphologies of Top-Silicon and Buried Oxide Layers in High-Temperature-Annealed Separation by IMplanted OXygen Wafers

Toshihiko Ishiyama, Masao Nagase

(Received May 23, 1995; accepted for publication August 28, 1995)

We examine whether there is a correlation between the morphologies at the cap SiO₂ layer/top Si layer interface and the top Si layer/buried SiO₂ layer interface of SIMOX (Separation by IMplanted OXygen) (100) wafers during high-temperature annealing. The morphologies were evaluated by scanning a marked position with an atomic force microscope (AFM). From the AFM observation, although some similarities were observed in the mosaic morphologies, squares were not positioned at corresponding locations at the two interfaces. Therefore, it is concluded that there is no correlation of the morphologies between the two interfaces. The squares on each interface grow independently.

KEYWORDS: SIMOX, AFM, correlation, annealing, morphology, microroughness
URL: http://jjap.ipap.jp/link?JJAP/34/6019/
DOI: 10.1143/JJAP.34.6019

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