Jpn. J. Appl. Phys. 34 (1995) pp. 812-816  |Next Article|  |Table of Contents|
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Low-Temperature Drain Current Characteristics in Sub-10-nm-Thick SOI nMOSFET's on SIMOX (Separation by IMplanted OXygen) Substrates

Yasuhisa Omura, Masao Nagase

(Received: August 31, 1994; accepted for publication December 10, 1994)

This paper describes specific features in low-temperature drain current and transconductance characteristics of thin silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors (SOI nMOSFET's) with a sub-10-nm-thick silicon layer and presents some simple analyses based on quantum mechanics. It is suggested that these features originate from the two-dimensional subband system in the thin SOI layer and its local deviation based on the local-deviated silicon layer thickness reflecting the buried oxide layer surface morphology of high-temperature-annealed SIMOX substrates.

KEYWORDS: SOI, thin film, SIMOX, conduction anomaly, subband, two-dimensional, quantum mechanics
URL: http://jjap.ipap.jp/link?JJAP/34/812/
DOI: 10.1143/JJAP.34.812

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