Jpn. J. Appl. Phys. 35 (1996) pp. 6429-6434  |Next Article|  |Table of Contents|
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A Beam Drift Reduction Device for the X-Ray Mask E-Beam Writer, EB-X2

Junichi  Kato, Kenichi  Saito, Hirofumi  Morita and Nobuo  Shimazu

(Received July 11, 1996; accepted for publication September 17, 1996)

A new drift reduction device for the X-ray mask e-beam writer, EB-X2, has been designed to keep reflected electrons (REs) and secondary electrons (SEs), which can charge the inner surface of the column, from re-entering the column. First, two electrodes, which have a circular opening in the center through which the incident beam passes, are placed between the column and the specimen. They keep REs re-entering the column. Second, a voltage of -50 V is applied between the two electrodes to prevent SEs from re-entering the column. Electron trajectory calculations revealed that the device keeps 84% of REs and 100% of SEs from re-entering the column. The effects of this device on the EB-X2's electron optical characteristics–that is, beam shape distortion, deflection distortion, and beam shift caused by electric-field leakage from the electrodes–were also estimated numerically. The calculated results show that the device can reduce beam drift without degrading the patterning accuracy.

KEYWORDS: electron beam lithography, beam drift, electron charging, beam positioning accuracy
URL: http://jjap.ipap.jp/link?JJAP/35/6429/
DOI: 10.1143/JJAP.35.6429

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