Jpn. J. Appl. Phys. 35 (1996) pp. L1148-L1150  |Next Article|  |Table of Contents|
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Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact

Hideo Namatsu, Masao Nagase, Kenji Kurihara, Seiji Horiguchi and Takahiro Makino

(Received July 8, 1996; accepted for publication August 21, 1996)

We propose a novel one-dimensional Si nanowire structure with a point contact. Wire structures are fabricated in a {110} Si layer by using KOH solution. Both the {111} planes projecting obliquely along the wire and the vertical {111} sidewalls of the wire are spontaneously exposed. By oxidation of this {111} plane structure, the wire structure is converted into the one-dimensional nanowire structure. In addition, since the nanowire structure is based on a form of the {111} plane structure, the planes projecting obliquely produces a point-contact structure which gradually increases in diameter toward the source and drain regions. The Si nanowires fabricated by this technique shows clear quantized conductance with little fluctuation on the plateaus.

KEYWORDS: one-dimensional wire, point-contact, {110} silicon, quantized conductance, crystallographic orientation-dependent etching
URL: http://jjap.ipap.jp/link?JJAP/35/L1148/
DOI: 10.1143/JJAP.35.L1148

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