Jpn. J. Appl. Phys. 36 (1997) pp. 3669-3674  |Next Article|  |Table of Contents|
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Fabrication of SiO₂/Si/SiO₂ Double Barrier Diodes using Two-Dimensional Si Structures

Hideo Namatsu, Seiji Horiguchi, Yasuo Takahashi, Masao Nagase and Kenji Kurihara

(Received September 19, 1996; accepted for publication April 8, 1997)

In this article, we demonstrate a technique for fabricating SiO₂/two-dimensional (2D)-Si/SiO₂ double barrier diodes and discuss their characteristics. Vertical 2D-Si with {111} side planes is formed by orientation-dependent etching of {110} Si using aqueous alkaline solution. The linewidth of the 2D-Si is reduced to nanometer order with NH₄F/H₂O₂ solution. This solution also removes the residue generated on Si planes etched by aqueous alkaline solution. Using a skillful arrangement of dummy patterns and an etchback technique, poly-Si electrodes are successfully formed without any lithographic alignments. A SiO₂/2D-Si/SiO₂ diode fabricated by this process shows resonant characteristics that are in agreement with the calculated values.

KEYWORDS: SiO₂/Si/SiO₂ double barrier diode, resonant characteristics, (110)Si, SOI, orientation-dependent etching
URL: http://jjap.ipap.jp/link?JJAP/36/3669/
DOI: 10.1143/JJAP.36.3669

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