Jpn. J. Appl. Phys. 36 (1997) pp. 7552-7556  |Next Article|  |Table of Contents|
|Full Text PDF (887K)| |Buy This Article|

Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography

Kenji Yamazaki, Kenji Kurihara, Toru Yamaguchi, Hideo Namatsu and Masao Nagase

(Received July 8, 1997; accepted for publication October 13, 1997)

A novel proximity effect, which includes the effect due to secondary electron scattering to a range of less than a micron and the pattern dependence of resist development, has been found and investigated to develop a precise dose control method in electron beam nanolithography. Experiments and simulations including secondary electron scattering were performed for precise evaluation of the proximity effect. This result revealed that the proximity effect caused by secondary electron scattering to the range between 30 nm and a micron is not negligible for nano-patterns. In addition, from experimental estimation of the rate of development of patterns of various sizes, a significant decrease of the rate was found for patterns less than 30-nm wide. The difference of the rate is also modified by the background deposited energy due to surrounding patterns. Therefore, we have to be very careful about how we determine the proper dose for a given nano-pattern.

KEYWORDS: proximity effect, EB lithography, resist development, nano-pattern, EID function, development rate, pattern dependence
URL: http://jjap.ipap.jp/link?JJAP/36/7552/
DOI: 10.1143/JJAP.36.7552

References | Citing Articles (7)

1. J. A. McMillian, S. Johnson and N. C. MacDonald: J. Vac Sci. & Technol. B 7 (1989) 1540[AIP Scitation].
2. W. Chen and H. Ahmed: Appl. Phys. Lett. 62 (1993) 1499[AIP Scitation].
3. T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara: J. Photopolym. Sci. Technol. 10 (1997) 635.
4. K. Murata, M. Kotera and K. Nagami: J. Appl. Phys. 52 (1981) 997[AIP Scitation].
5. N. Samoto and R. Shimizu: J. Appl. Phys. 54 (1983) 3855[AIP Scitation].
6. M. Kotera: J. Appl. Phys. 65 (1989) 3991[AIP Scitation].
7. K. Kurihara, K. Iwadate, H. Namatsu, M. Nagase, H. Takenaka and K. Murase: Jpn. J. Appl. Phys. 34 (1995) 6940[IPAP].
8. H. Namatsu, M. Nagase, K. Kurihara, K. Iwadate and K. Murase: J. Vac. Sci. & Technol. B 13 (1995) 1473[AIP Scitation].
9. Y. Takahashi, H. Namatsu, K. Kurihara, K. Iwadate, M. Nagase and K. Murase: IEEE Trasns. Electron Devices 43 (1996) 1213.
10. M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, K. Murase and T. Makino: Microelectron. Eng. 30 (1996) 419.
11. T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara: submitted to Appl. Phys. Lett.