Jpn. J. Appl. Phys. 38 (1999) pp. L1265-L1267  |Next Article|  |Table of Contents|
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Interface and Domain Structures of (116)-Oriented SrBi2Ta2O9 Thin Film Epitaxially Grown on (110) SrTiO3 Single Crystal

Toshimasa Suzuki, Yuji Nishi, Masayuki Fujimoto, Katsuyuki Ishikawa1 and Hiroshi Funakubo1

Taiyo Yuden Co., Ltd., 5607-2 Nakamuroda, Haruna-machi, Gunma 370-3347, Japan
1Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan

(Received August 19, 1999; accepted for publication September 6, 1999)

The interface and domain structures in epitaxial (116)-oriented SrBi2Ta2O9 films on (110) SrTiO3 substrates were investigated by high-resolution transmission electron microscopy. The film contains domain boundaries due to the formation of two types of (116)-oriented crystallites with symmetrical tilted c-axis directions and numerous wavy c/6 translational boundaries originating from the domain boundaries. Each epitaxial crystallite forms a semicoherent interface accompanying periodic lattice strain, where the alternate continuity of perovskite layers in the film to the perovskite structure of SrTiO3 is found. Such a quasi-stable interface structure may be the primary cause of difficulty in the preparation of epitaxial SrBi2Ta2O9 films with the tilted c-axis.

KEYWORDS: layered perovskite structure, domain structure, transmission electron microscopy, epitaxial growth, strontium titanate substrate, MOCVD, twin
URL: http://jjap.ipap.jp/link?JJAP/38/L1265/
DOI: 10.1143/JJAP.38.L1265


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