Jpn. J. Appl. Phys. 38 (1999) pp. L1265-L1267 |Next Article| |Table of Contents|
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Interface and Domain Structures of (116)-Oriented SrBi2Ta2O9 Thin Film Epitaxially Grown on (110) SrTiO3 Single Crystal
Toshimasa Suzuki,
Yuji Nishi,
Masayuki Fujimoto,
Katsuyuki Ishikawa1 and
Hiroshi Funakubo1
Taiyo Yuden Co., Ltd., 5607-2 Nakamuroda, Haruna-machi, Gunma 370-3347, Japan
1Department of Innovative and Engineered Materials, Tokyo
Institute of Technology,
4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
(Received August 19, 1999; accepted for publication September 6, 1999)
The interface and domain structures in epitaxial (116)-oriented
SrBi2Ta2O9 films on (110) SrTiO3 substrates were
investigated by high-resolution transmission electron microscopy. The
film contains domain boundaries due to the formation of two types of
(116)-oriented crystallites with symmetrical tilted c-axis
directions and numerous wavy c/6 translational boundaries
originating from the domain boundaries. Each epitaxial crystallite
forms a semicoherent interface accompanying periodic lattice strain,
where the alternate continuity of perovskite layers in the film to the
perovskite structure of SrTiO3 is found. Such a quasi-stable
interface structure may be the primary cause of difficulty in the
preparation of epitaxial SrBi2Ta2O9 films with the
tilted c-axis.
KEYWORDS:
layered perovskite structure, domain structure, transmission electron microscopy, epitaxial growth, strontium titanate substrate, MOCVD, twin
URL:
http://jjap.ipap.jp/link?JJAP/38/L1265/
DOI: 10.1143/JJAP.38.L1265
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