Jpn. J. Appl. Phys. 39 (2000) pp. 2325-2328  |Next Article|  |Table of Contents|
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Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation

Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara and Katsumi Murase

(Received October 5, 1999; accepted for publication December 3, 1999)

Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.

KEYWORDS: single-electron transistor, Si, Coulomb blockade, SOI, oxidation, nano structure
URL: http://jjap.ipap.jp/link?JJAP/39/2325/
DOI: 10.1143/JJAP.39.2325

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