Jpn. J. Appl. Phys. 39 (2000) pp. 413-416  |Next Article|  |Table of Contents|
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Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

Tetsuya Takeuchi, Hiroshi Amano and Isamu Akasaki

(Received September 8, 1999; accepted for publication November 1, 1999)

We calculated the crystal orientation dependence of piezoelectric fields in wurtzite strained Ga_0.9In_0.1N/GaN heterostructures. The highest longitudinal piezoelectric field of 0.7 MV/cm can be generated in (0001)-oriented biaxial-strained Ga_0.9In_0.1N layer coherently grown on GaN. On the contrary, no longitudinal piezoelectric field is induced in strained layers grown along orientations at an off angle of 39° or 90° from (0001). The high symmetry planes with these angles are, for instance, (1124) and (1012) for 39°, and (1120) and (1010) for 90°. We also calculated the crystal orientation dependence of the transition probability in a 3-nm strained Ga_0.9In_0.1N/GaN quantum well, which indicated that the transition probability with these non-(0001) orientations becomes 2.3 times larger than that with the (0001) orientation. We conclude that high-performance strained nitride-based optical devices can be obtained by control of the crystal orientation.

KEYWORDS: GaN, GaInN, piezoelectric field, crystal orientation, transition probability
URL: http://jjap.ipap.jp/link?JJAP/39/413/
DOI: 10.1143/JJAP.39.413

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