Jpn. J. Appl. Phys. 41 (2002) pp. 4863-4866  |Next Article|  |Table of Contents|
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Strain Engineering in Germanium Quantum Dot Growth on Silicon and Silicon-on-Insulator

Max G. Lagally and Paul P. Rugheimer

(Received April 22, 2002; accepted for publication April 26, 2002)

Strain-driven self-assembly processes during heteroepitaxy are widely recognized as a viable route to creating large arrays of nanostructures that can act as quantum dots (QDs). In this strain driven self-assembly, the underlying substrate plays a significant role, affecting composition, mechanical properties, and electrical properties. By engineering the substrates we are able to modify QD growth and properties.

KEYWORDS: quantum dots, self-assembly, heteroepitaxy, strain, nanostressors, silicon-on-insulator, germanium, carbon nanotubes, scanned-probe microscopy, electrical properties
URL: http://jjap.ipap.jp/link?JJAP/41/4863/
DOI: 10.1143/JJAP.41.4863

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