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Jpn. J. Appl. Phys. 42 (2003) pp. 5445-5449  |Next Article|  |Table of Contents|
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Influence of 3d-Transition-Metal Additives on Single Crystal Growth of GaN by the Na Flux Method

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama1, Hirokazu Iwata1 and Francis J. Disalvo2

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
1Department 1, R & D Center, Research and Development Group, Ricoh Company, Ltd., 5-10 Yokarakami, Kumanodo, Takadate, Natori 981-1241, Japan
2Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USA

(Received March 27, 2003; revised manuscript revised May 30, 2003; accepted for publication June 2, 2003)

The influence of 3d-transition-metal additives (Cr, Mn, Fe, Co and Ni) on crystal growth of GaN at 750–850°C by the Na flux method was investigated. In the case of Cr addition, CrN single crystals were deposited and no significant difference in the crystal growth of GaN was found. In the case of Mn addition, growth of GaN single crystals in the -c direction was enhanced and prismatic crystals were obtained. Mn of 0.10–0.35 at.% was contained in GaN crystals. The Mn-doped GaN crystals were red or orange in color and showed Curie-like paramagnetism. Fe, Co and Ni additives also enhanced the growth of prismatic crystals. These transition-metal elements as well as Cr were not detected in the GaN crystals by inductively coupled plasma (ICP) atomic emission spectroscopy. Colorless transparent prismatic crystals having 1.5 mm length were prepared using the Ni additive.

KEYWORDS: GaN, single crystal, flux growth, additive, morphology, magnetic property
URL: http://jjap.ipap.jp/link?JJAP/42/5445/
DOI: 10.1143/JJAP.42.5445


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