Jpn. J. Appl. Phys. 42 (2003) pp. 7349-7353  |Next Article|  |Table of Contents|
|Full Text PDF (181K)| |Buy This Article|

Excimer Laser Annealing with a Line Beam for Improvement of Structural and Optical Properties of Polycrystalline GaN

Dae-Jin Kim, Seong-Eun Park¹, Hyun-Jung Kim, Je-Kil Ryu, Byungsung O¹ and Sung-Sik Pak

(Received April 16, 2003; accepted July 30, 2003; published December 10, 2003)

Polycrystalline gallium nitride (GaN) thin films of thickness 3.0 µm grown on silica glass substrates were annealed by a line beam of a KrF excimer laser under vacuum. The applied laser energy density was in the range of 300–600 mJ/cm². Photoluminescence (PL) and X-ray diffraction (XRD) measurements have been carried out to investigate the laser annealing effects in polycrystalline GaN films grown on silica glass by metal-organic chemical vapor deposition (MOCVD). The results of the PL spectra revealed that the intensity of the band edge (BE) emission for the GaN on silica glass annealed at a laser energy density of 500 mJ/cm² was increased by as much as about 1.5 times in comparison with the as-grown GaN. It was found that the full width at half maximum (FWHM) of the XRD for laser annealed GaN film at a high laser energy density, 500 mJ/cm², with 200 pulses was smaller than that of the as-grown GaN. These results indicate that the structural and optical properties of the poly-GaN layers grown on silica glass substrate are improved by the laser annealing method.

KEYWORDS: laser annealing, KrF excimer laser, polycrystalline GaN, grain boundary, photoluminescence (PL)
URL: http://jjap.ipap.jp/link?JJAP/42/7349/
DOI: 10.1143/JJAP.42.7349

References | Citing Articles (2)

1. S. Nakamura, T. Mukai and M. Senoh: Appl. Phys. Lett. 64 (1994) 1687[AIP Scitation].
2. S. H. Jang, S. J. Lee, I. S. Seo, H. K. Ahn, O. Y. Lee, J. Y. Leem and C. R. Lee: J. Cryst. Growth 241 (2002) 289[CrossRef].
3. T. S. Zheleva, O. H. Nam, W. M. Ashmawi, J. D. Griffin and R. F. David: J. Cryst. Growth 222 (2001) 706[CrossRef].
4. S. Fujieda and Y. Matsumoto: Jpn. J. Appl. Phys. 30 (1991) L1665[IPAP].
5. H. Asahi, K. Iwata, H. Tampo, R. Kuroiwa, M. Hiroki, K. Asami, S. Nakamura and S. Gonda: J. Cryst. Growth 201–202 (1999) 371[CrossRef].
6. N. Murata, H. Tochishita, Y. Shimizu, T. Araki and Y. Nanishi: Jpn. J. Appl. Phys. 37 (1998) L1214[IPAP].
7. Y. Sato, A. Kurosaki and S. Sato: J. Cryst. Growth 189–190 (1998) 42[CrossRef].
8. H. Tampo, H. Asahi, Y. Imanishi, M. Hiroki, K. Ohnishi, K. Yamada, K. Asami and S. Gonda: J. Cryst. Growth 227–228 (2001) 442[CrossRef].
9. S. E. Park, D. J. Kim, S. G. Woo, S. M. Lim and B. S. O: J. Cryst. Growth 242 (2002) 383[CrossRef].
10. J. Dutta, R. Pal, S. K. Bhattacharyya, S. Chaudhuri and A. K. Pal: Mater. Chem. Phys. 36 (1993) 177.
11. R. B. Iverson and R. Reif: J. Appl. Phys. 57 (1985) 5169[AIP Scitation].
12. H. Kuriyama, T. Nohda and S. Ishida: Jpn. J. Appl. Phys. 32 (1993) 6190[IPAP].
13. K. Shimizu, O. Sugiura and M. Matsumura: IEEE Trans. Electron Devices 40 (1993) 112[CrossRef].
14. D. Bäuerle: Laser Processing and Chemistry (Springer-Verlag, New York, 1996) 3rd ed., Chap. 23.
15. T. Hashimoto, O. Imafuji, M. Ishida, Y. Terakoshi, T. Sugino, A. Yoshikawa, K. Itho and J. Shirafuji: J. Cryst. Growth 169 (1996) 185[CrossRef].
16. N. A. Preschilla, N. M. Elkashef, R. S. Srinivasa and S. Major: Surf. Coat. Technol. 108–109 (1998) 328.
17. H. Yuan, Z. Chen, D. C. Lu, X. Liu, P. Han and X. Wang: J. Cryst. Growth 234 (2002) 115[CrossRef].
18. S. H. Yang, S. H. Ahn, M. S. Jeong, K. S. Nahm, E. K. Suh and K. Y. Lim: Solid-State Electron. 44 (2000) 1655[Elsevier].
19. J. M. Poate: Laser Annealing of Semiconductors (Academic press, New York, 1982) Chap. 4.
20. J. H. Edgar: Properties of Group III Nitrides (INSPEC, London, 1994).
21. N. David: Properties of Optical and Laser-Related Material (John Wiley & Sons, New York, 1997).
22. K. Iwata, H. Asahi, R. Kuroiwa, K. Asami and S. Gonda: J. Cryst. Growth 188 (1998) 98[CrossRef].