Jpn. J. Appl. Phys. 42 (2003) pp. L1109-L1111 |Next Article| |Table of Contents|
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Letter
Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
Yukinori Ono,
Neil M. Zimmerman1,
Kenji Yamazaki and
Yasuo Takahashi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
1National Institute of Standards and Technology, Gaithersburg, Maryland 20899, U.S.A.
(Received June 3, 2003; accepted August 9, 2003; published September 25, 2003)
A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency f of ∼1 MHz and a phase shift of π, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.
KEYWORDS:
single-electron turnstile, single-electron transistor, silicon-on-insulator, nanotechnology, current standard
URL:
http://jjap.ipap.jp/link?JJAP/42/L1109/
DOI: 10.1143/JJAP.42.L1109
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