Jpn. J. Appl. Phys. 43 (2004) pp. 4150-4152  |Previous Article| |Next Article|  |Table of Contents|
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Optical Properties of High Energy Tin (Sn⁵⁺) Ion Irradiated Metal-Organic Chemical Vapor Deposition Grown GaN on Sapphire

Premchander Perumal, Sonia Ganaprakasam and Baskar Krishnan

(Received January 3, 2004; accepted March 8, 2004; published July 7, 2004)

Unintentionally doped n-type GaN(0001) epitaxial layers grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates have been irradiated with 75 MeV Tin (Sn⁵⁺) ion. Effect of different ion fluences at 10¹¹, 10¹² and 10¹³ cm^-2 were studied by means of time correlated single photon counting (TCSPC), UV-visible optical spectroscopy and photoluminescence (PL) measurements at room temperature. The exponential decay of minority carrier life times was observed between 1910 and 1110 ps (pico-second) with increasing ion doses upto 10¹³ cm^-2. High-energy irradiation with different ion fluences of GaN epitaxial layers creates midgap states in the material. Change in the absorption edges between 3.41 and 2.95 eV were observed by UV-absorption coefficient (α²) method on increasing fluences rate. Band-edge and yellow emissions were recorded for all GaN samples by transient steady state PL measurement at room temperature.

KEYWORDS: GaN, irradiation, minority carrier lifetime decay, photoluminescence, absorption
URL: http://jjap.ipap.jp/link?JJAP/43/4150/
DOI: 10.1143/JJAP.43.4150

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