Jpn. J. Appl. Phys. 43 (2004) pp. 4624-4628  |Previous Article| |Next Article|  |Table of Contents|
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A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology

Masao Nagase and Hideo Namatsu

(Received January 14, 2004; accepted April 6, 2004; published July 29, 2004)

We propose a new method for assembling nano-electromechanical devices using focused ion beam (FIB) technology. After milling the area surrounding a device (30 µm×10 µm), a small chip containing nano-four-point probes with 60-nm-pitch Si electrodes was picked up by a microprobe and transferred to a scanning probe microscopy (SPM) microcantilever with four aluminum electrodes. Interconnections by tungsten (W) lines between the Si electrodes of the nanodevice and the Al electrodes of the cantilever were formed by FIB-induced gas deposition. The connection of FIB-W lines was confirmed by biased scanning electron microscopy (SEM). We successfully demonstrated a nano-four-point probe system on an SPM cantilever.

KEYWORDS: four-point probes, cantilever, focused ion beam, scanning probe microscopy, resistivity measurement, nanotechnology, FIB milling, FIB deposition
URL: http://jjap.ipap.jp/link?JJAP/43/4624/
DOI: 10.1143/JJAP.43.4624

References | Citing Articles (4)

1. H. Kawaura, T. Sakamoto and T. Baba: Appl. Phys. Lett. 76 (2000) 3810[AIP Scitation].
2. Y. Takahashi, H. Namatsu, K. Kurihara, K. Iwadate, M. Nagase and K. Murase: IEEE Trans. ED 43 (1996) 1213.
3. M. Nagase, S. Horiguchi, A. Fujiwara and Y. Takahashi: Jpn. J. Appl. Phys. 42 (2003) 2438[IPAP].
4. M. A. Reed, C. Zhou, C. J. Muller, T. P. Burgin and J. M. Tour: Science 278 (1997) 252[Science].
5. P. Bøggild, T. M. Hansen, O. Kuhn, F. Grey, T. Junno and L. Montelius: Rev. Sci. Instrum. 71 (2000) 2781[AIP Scitation].
6. M. Nagase, H. Takahashi, Y. Shirakawabe and H. Namatsu: Jpn. J. Appl. Phys. 42 (2003) 4856[IPAP].
7. K. Yamazaki, A. Fujiwara, Y. Takahashi, H. Namatsu and K. Kurihara: Jpn. J. Appl. Phys. 37 (1998) 6788[IPAP].
8. K. Kurihara, K. Iwadate, H. Namatsu, M. Nagase and K. Murase: J. Vac. Sci. & Technol. B 13 (1995) 2170[AIP Scitation].
9. H. Kawakatsu, D. Saya, A. Kato, K. Fukushima, H. Toshiyoshi and H. Fujita: Rev. Sci. Instrum. 73 (2002) 1188[AIP Scitation].
10. H. Langfischer, B. Basnar, H. Hutter and E. Bertagnolli: J. Vac. Sci. & Technol. A 20 (2002) 1408[AIP Scitation].