Jpn. J. Appl. Phys. 43 (2004) pp. L1258-L1260 |Previous Article| |Next Article| |Table of Contents|
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Letter
Improvement of Crystal Quality of AlGaN Multi Quantum Well Structure by Combination of Flow-Rate Modulation Epitaxy and AlN/GaN Multi-Buffer Layer and Resultant Lasing at Deep Ultra-Violet Region
Takayoshi Takano,
Yasuyuki Ohtaki,
Yoshinobu Narita and
Hideo Kawanishi
Department of Electronics Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachioji-shi, Tokyo 192-0015, Japan
(Received June 10, 2004; accepted July 29, 2004; published September 10, 2004)
The crystal quality of AlN and AlGaN MQW layers was improved greatly by a combination of flow-rate modulation epitaxy (FME) and the optimized AlN/GaN multi-buffer layer in low-pressure metal organic vapor phase epitaxy (LP-MOVPE). The cross-sectional TEM image indicated that the threading-dislocation density of the AlN template decreased from 109–1010 cm-2 to 107–108 cm-2 by this combination. Resultantly, the lasing wavelength with the same optical pumping power decreased by about 80 nm, and lasing at 241 nm, the shortest reported so far at room temperature, has been achieved.
KEYWORDS:
Deep-UV, AlGaN-MQW laser, multi buffer layer, SiC substrate, metal organic vapor phase epitaxy
URL:
http://jjap.ipap.jp/link?JJAP/43/L1258/
DOI: 10.1143/JJAP.43.L1258
- M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita and N. M. Johnson:
Appl. Phys. Lett. 82 (2003) 4441[AIP Scitation].
- K. Iida, H. Kasugai, S. Mishima, Y. Miyake, A. Honshio, T. Kawashima, A. Miyazaki, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki:
Jpn. J. Appl. Phys. 43 (2003) L499[IPAP].
- T. J. Schmidt, Y. H. Cho and J. J. Song:
Appl. Phys. Lett. 74 (1999) 245[AIP Scitation].
- H. Hirayama, Y. Enomoto, A. Kinoshita, A. Hirata and Y. Aoyagi:
Appl. Phys. Lett. 80 (2002) 1589[AIP Scitation].
- A. Hanlon, P. Pattison, J. F. Kaeding, R. Sharma, P. Fini and S. Nakamura:
Jpn. J. Appl. Phys. 42 (2003) L628[IPAP].
- J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang and A. Khan:
Appl. Phys. Lett. 81 (2002) 4910[AIP Scitation].
- S. A. Nikishin, V. V. Kuryatkov, A. Chandolu, B. A. Borisov, G. D. Kipshidze, I. Ahmad, M. Holtz and H. Temkin:
Jpn. J. Appl. Phys. 42 (2003) L1362[IPAP].
- M. Hiroki and N. Kobayashi:
Jpn. J. Appl. Phys. 42 (2003) 2305[IPAP].
- Y. Ishihara, J. Yamamoto, M. Kurimoto, T. Takano, T. Honda and H. Kawanishi:
Jpn. J. Appl. Phys. 38 (1999) L1296[IPAP].
- M. Horie, Y. Ishihara, J. Yamamoto, M. Kurimoto, T. Takano and H. Kawanishi: Phys. Stat. Sol. A 192 (2002) 151.
- T. Takano, Y. Narita, A. Horiuchi and H. Kawanishi:
Appl. Phys. Lett. 84 (2004) 3567[AIP Scitation].
