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Jpn. J. Appl. Phys. 43 (2004) pp. L264-L266  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

Ru-Chin Tu, Chun-Ju Tun¹, Chang-Cheng Chuo, Bing-Chi Lee², Ching-En Tsai, Te-Chung Wang, Jim Chi, Chien-Ping Lee² and Gou-Chung Chi¹

Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China
¹Institute of Optical Science, National Central University, Chung-Li 32054, Taiwan, Republic of China
²Department of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China

(Received August 28, 2003; accepted September 30, 2003; published February 6, 2004)

This study examined how the duration of SiN_x treatment on an underlying GaN layer affects the optical property, surface morphology and density of following InGaN quantum dots (QDs). InGaN QDs with extremely high density of near 3×10¹¹ cm^-2 exhibited strong photoluminescence (PL) emission at room temperature (RT). Increasing the duration of the SiN_x treatment of the underlying GaN layer, the RT-PL peak of the following InGaN nano-islands and QDs was found to be red-shifted from the violet to the greenish region, and the spectrum was broadened. Additionally, the average height of InGaN nano-islands and QDs increased with the duration of SiN_x treatment, explaining the redshift of the RT-PL peak.

KEYWORDS: InGaN, quantum dot, density, SiN_x, photoluminescence, atomic force microscopy
URL: http://jjap.ipap.jp/link?JJAP/43/L264/
DOI: 10.1143/JJAP.43.L264

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