Jpn. J. Appl. Phys. 43 (2004) pp. L981-L983  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Synthesis of Al_xGa_1-xN Alloy by Solid-Phase Reaction under High Pressure

Hiroyuki Saitoh, Wataru Utsumi, Hiroshi Kaneko and Katsutoshi Aoki

(Received May 10, 2004; accepted June 3, 2004; published July 2, 2004)

Bulk specimens of Al_xGa_1-xN alloys covering a composition range of 0≤x≤1 were synthesized by a solid-phase reaction under high pressure. In situ X-ray diffraction profiles were measured to observe the alloying process, which began at around 800°C under 6.0 GPa. SEM observation and X-ray analysis of the recovered specimen indicated a uniform distribution of Al and Ga and continuous variations of the lattice constants against the composition, which implies that a solid solution of AlN and GaN is formed regardless of atomic composition.

KEYWORDS: Al_xGa_1-xN alloys, solid-phase reaction, high pressure and temperature, synchrotron radiation, in situ X-ray diffraction
URL: http://jjap.ipap.jp/link?JJAP/43/L981/
DOI: 10.1143/JJAP.43.L981

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