Jpn. J. Appl. Phys. 44 (2005) pp. 1181-1185  |Previous Article| |Next Article|  |Table of Contents|
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High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density

Daniela Gogova^1,2, Henrik Larsson¹, Alexander Kasic¹, Gholam Reza Yazdi¹, Ivan Ivanov¹, Rositza Yakimova¹, Bo Monemar¹, Eric Aujol³, Eric Frayssinet³, Jean-Pierre Faurie³, Bernard Beaumont³ and Pierre Gibart³

(Received November 11, 2004; accepted December 6, 2004; published March 8, 2005)

High-quality 2'' crack-free free-standing GaN has been attained by hydride vapour phase epitaxial growth on a Si-doped MOVPE GaN template with a low dislocation density and subsequent laser-induced lift-off process. A low value of dislocation density of ∼2.0×10⁷ cm^-2 on the Ga-polar face was determined from cathodoluminescence images. X-ray diffraction (XRD) and low-temperature photoluminescence (PL) were exploited to investigate the structural and optical properties of the GaN material. The full width at half maximum value of XRD ω-scan of the free-standing GaN is 248 arcsec for the (1 0 1 4) reflection. The XRD and low-temperature PL mapping measurements consistently proved the high crystalline quality as well as the lateral homogeneity and the small residual stress of the material. Hence, the bulk-like free-standing GaN studied here is highly advantageous for being used as a lattice-constant and thermal-expansion-coefficient matched substrate for additional strain-free homoepitaxy of III–nitrides-based device heterostructures. The strain-free homoepitaxy will significantly reduce the defect density and thus, an improvement of the device performance and lifetime could be achieved.

KEYWORDS: GaN, HVPE, free-standing, bulk-like
URL: http://jjap.ipap.jp/link?JJAP/44/1181/
DOI: 10.1143/JJAP.44.1181

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