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Jpn. J. Appl. Phys. 44 (2005) pp. 2588-2591  |Previous Article| |Next Article|  |Table of Contents|
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Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor

Yukinori Ono, Katsuhiko Nishiguchi, Hiroshi Inokawa, Seiji Horiguchi1 and Yasuo Takahashi2

NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
1Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University, 1-1 Tegata-gakuen-machi, Akita-shi, Akita 010-8502 Japan
2Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Hokkaido 060-0814, Japan

(Received September 10, 2004; accepted November 11, 2004; published April 21, 2005)

The drain current vs gate-voltage characteristics of a phosphorus-doped n-channel silicon-on-insulator metal-oxide-semiconductor field-effect transistor have been investigated. It was shown that, by controlling the voltage to the substrate at 20 K, the charge states of phosphorus donors can be changed in a controlled manner. Most of the donors are neutralized for the substrate voltage of around 0 V, while a major portion of the donors is ionized for a positive or negative voltage. Such a change can be detected by monitoring the change in the threshold voltage of the transistor. This is an experimental demonstration of the systematic control and monitoring of donor charge states in silicon.

KEYWORDS: silicon on insulator, MOSFET, donor, phosphorus, freezeout
URL: http://jjap.ipap.jp/link?JJAP/44/2588/
DOI: 10.1143/JJAP.44.2588


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