Jpn. J. Appl. Phys. 44 (2005) pp. 3913-3917  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (197K)| |Buy This Article|

Impact of H₂-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer

Michinobu Tsuda^1,2, Krishnan Balakrishnan², Motoaki Iwaya², Satoshi Kamiyama², Hiroshi Amano² and Isamu Akasaki²

(Received November 9, 2004; accepted March 10, 2005; published June 10, 2005)

Effect of H₂-preannealing of sapphire substrate on low-temperature-deposited (LT) AlN buffer layer deposited by metalorganic vapor epitaxy has been investigated. Crystallinity of LT-AlN buffer layer drastically changes with preannealing temperature variation. It is found that H₂-preannealing of sapphire substrate is a requisite to get a better quality LT-AlN and as a consequence it leads to growth of better quality GaN epi-layer on it.

KEYWORDS: MOVPE, GaN, sapphire, H₂-preannealing, LT-AlN, buffer layer
URL: http://jjap.ipap.jp/link?JJAP/44/3913/
DOI: 10.1143/JJAP.44.3913

References | Citing Article (1)

1. I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koide and H. Amano: Electron. Lett. 32 (1996) 1105[AIP Scitation].
2. S. Nakamura and G. Fosal: The Blue Laser Diodes (Springer, Berlin, 1997).
3. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano and T. Mukai: Jpn. J. Appl. Phys. 41 (2002) 1431[IPAP].
4. T. Nishida, T. Ban and N. Kobayashi: Jpn. J. Appl. Phys. 42 (2003) 2273[IPAP].
5. M. Iwaya, S. Takanami, A. Miyazaki, T. Kawashima, K. Iida, S. Kamiyama, H. Amano and I. Akasaki: Phys. Status Solidi A 200 (2003) 110[CrossRef].
6. J. Burn, K. Chu, W. J. Schaff, L. F. Eastman, M. Asif. Khan, Q. Chan, J. W. Yang and M. S. Shur: IEEE Electron Device Lett. 18 (1997) 141[CrossRef].
7. Y. F. Wu, B. P. Keller, S. Keller, J. J. Xu, B. J. Thibeault, S. P. DenBaars and U. K. Mishra: IEICE Trans. Electron. E82-C (1999) 1895.
8. M. Asif Khan, M. S. Shur and G. Simin: Phys. Status Solidi A 200 (2003) 155[CrossRef].
9. M. Kuzuhara, H. Miyamoto, Y. Ando, T. Inoue, Y. Okamoto and T. Nakayama: Phys. Status Solidi A 200 (2003) 161[CrossRef].
10. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda: Appl. Phys. Lett. 48 (1986) 353[AIP Scitation].
11. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu and N. Sawaki: J. Cryst. Growth 98 (1989) 209[CrossRef].
12. M. Tabuchi, H. Kyouzu, Y. Takeda, S. Yamaguchi, H. Amano and I. Akasaki: J. Cryst. Growth 237 (2002) 1133[Elsevier].
13. M. Sumiya, M. Tanaka, K. Ohtsuka, S. Fuke, Ohnishi, T. Ohkubo, I. Yoshimoto, H. Koinuma and M. Kawasaki: Appl. Phys. Lett. 75 (1999) 674[AIP Scitation].
14. M. Yoshimoto, T. Maeda, H. Ohnishi and T. Koinuma: Appl. Phys. Lett. 67 (1995) 2615[AIP Scitation].
15. Y. Koide, N. Itoh, K. Itoh, N. Sawaki and I. Akasaki: Jpn. J. Appl. Phys. 27 (1988) 1156[IPAP].
16. M. Tsuda, K. Watanabe, S. Kamiyama, H. Amano, I. Akasaki, R. Liu, A. Bell and F. A. Ponce: Appl. Surf. Sci. 216 (2003) 585[CrossRef].