Jpn. J. Appl. Phys. 44 (2005) pp. 5409-5412  |Previous Article| |Next Article|  |Table of Contents|
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Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology

Masao Nagase, Kenichiro Nakamatsu^1,2, Shinji Matsui^1,2 and Hideo Namatsu

(Received January 17, 2005; accepted April 1, 2005; published July 26, 2005)

A new multiprobe system for scanning probe microscopy for electrical property measurements has been developed. Four carbon probes with nanosprings have been grown using focused-ion-beam chemical vapor deposition (FIB-CVD) on a Si cantilever with Al electrodes. The diameter of the carbon probe is 110 nm, and the diameter of the nanospring is 380 nm. The total height of the probe with the nanospring is approximately 10 µm. The stiffness of the probe is sufficiently high for imaging in the contact mode. The nanosprings compensate for the height differences between the four probes. It is confirmed that electrical contacts between a conductive sample and all four probes are established. This is the first report on a FIB-CVD probe with a nanospring actually operating as a nano-electromechanical system.

KEYWORDS: four-point-probe, nanospring, cantilever, focused ion beam, scanning probe microscopy, resistivity measurement, nanotechnology, FIB deposition, carbon probe, nano-electromechanical system
URL: http://jjap.ipap.jp/link?JJAP/44/5409/
DOI: 10.1143/JJAP.44.5409

References | Citing Articles (9)

1. C. L. Petersen, G. Grey, I. Shiraki and S. Hasegawa: Appl. Phys. Lett. 77 (2000) 3782[AIP Scitation].
2. I. Shiraki, F. Tanabe, R. Hobara, T. Nagao and S. Hasegawa: Surf. Sci. 493 (2001) 633[CrossRef].
3. I. Shiraki, T. Nagao and S. Hasegawa: Surf. Rev. Lett. 7 (2000) 533.
4. P. Bøggild, T. M. Hansen, O. Kuhn, F. Grey, T. Junno and L. Montelius: Rev. Sci. Instrum. 71 (2000) 2781[AIP Scitation].
5. M. Nagase, H. Takahashi, Y. Shirakawabe and H. Namatsu: Jpn. J. Appl. Phys. 42 (2003) 4856[IPAP].
6. M. Nagase and H. Namatsu: Jpn. J. Appl. Phys. 43 (2004) 4624[IPAP].
7. S. Matsui, T. Kaitio, J. Fujita, M. Komuro, K. Kanda and Y. Haruyama: J. Vac. Sci. & Technol. B 18 (2000) 3181[AIP Scitation].
8. T. Morita, K. Nakamatsu, K. Kanda, Y. Haruyama, K. Kondo, T. Hoshino, T. Kaitio, J. Fujita, T. Ichihashi, M. Ishida, Y. Ochiai, T. Tajima and S. Matsui: J. Vac. Sci. & Technol. B 22 (2004) 3137[AIP Scitation].
9. J. Fujita, M. Ishida, T. Sakamoto, Y. Ochiai, T. Kaito and S. Matsui: J. Vac. & Sci. Technol. B 19 (2001) 2834[AIP Scitation].
10. G. Zhang and Y. Zhao: J. Appl. Phys. 95 (2004) 267[AIP Scitation].