Jpn. J. Appl. Phys. 44 (2005) pp. 6859-6861  |Previous Article| |Next Article|  |Table of Contents|
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Brief Communication

Characterization of Chemical Vapor Deposition Growth Yields of Carbon Nanotube Transistors

Jun Lin, Patrick Xuan and Jeffrey Bokor

(Received March 11, 2005; revised May 2, 2005; accepted May 19, 2005; published September 8, 2005)

We investigate the dependence of chemical vapor deposition (CVD) growth yield of carbon nanotube (CN) transistors on both the device size and CN formation process. Statistical data shows that high fabrication yields of 90% can be achieved for a chip of CN transistors. Although no special efforts at orientation were made, the CNs connecting the source and drain were generally found to be aligned perpendicularly to the source and drain.

KEYWORDS: carbon nanotube transistor, chemical vapor deposition, catalyst, yield, semiconducting, metallic, Mo
URL: http://jjap.ipap.jp/link?JJAP/44/6859/
DOI: 10.1143/JJAP.44.6859

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