Jpn. J. Appl. Phys. 44 (2005) pp. L1-L3 |Next Article| |Table of Contents|
|Full Text PDF (148K)| |Buy This Article|
Express Letter
Synthesis of GaN Crystal Using Gallium Hydride
Fumio Kawamura,
Mamoru Imade,
Masashi Yoshimura,
Yusuke Mori and
Takatomo Sasaki
Graduate school of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
(Received October 18, 2004; accepted November 6, 2004; published December 10, 2004)
A new method for synthesizing a large area of c-axis GaN film was developed. The gallium hydride which was formed by the reaction between metal-Ga and hydrogen gas was used as the Ga source, and reacted with NH3 gas to grow GaN crystals on the sapphire (0001) substrate. 2.7 µm-thick GaN film with c-axis orientation could be grown on the substrate. Stable conditions for the synthesis of gallium hydride by the reaction of H2 gas with metal-Ga were examined. As a result, gallium hydride is stable at about 1000°C which is a temperature commonly used for the growth of GaN. These results show that the use of gallium hydride as the predominant species of the Ga source can provide a relatively inexpensive method of growing GaN crystals at a high level of purity.
KEYWORDS:
GaN, single crystal, gallium hydride, bulk, growth mechanism
URL:
http://jjap.ipap.jp/link?JJAP/44/L1/
DOI: 10.1143/JJAP.44.L1
- S. Kaiser, H. Preis, W. Gebhardt, O. Ambacher, H. Angerer, M. Stutzmann, A. Rosenauer and D. Gerthsen:
Jpn. J. Appl. Phys. 37 (1998) 84[IPAP].
- K. Motoki, T. Okahisa, S. Nakahata, N. Matsumoto, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, M. Ueno, Y. Kumagai, A. Koukitu and H. Seki:
J. Cryst. Growth 237–239 (2002) 912[CrossRef].
- E. Aujol, A. Trassoudaine, L. Siozade, A. Pimpinelli and R. Cadoret:
J. Cryst. Growth 230 (2001) 372[CrossRef].
- K. Lee and K. Auh: MRS Internet J. Nitride Semicond. Res. 6. 9 (2001).
- M. Namerikawa, T. Sato, O. Takahashi, T. Suemasu and F. Hasegawa:
J. Cryst. Growth 237–239 (2002) 1089[CrossRef].
- J. Y. Li, X. L. Chen, Z. Y. Qiao, Y. G. Cao and Y. C. Lan:
J. Cryst. Growth 213 (2000) 408[CrossRef].
- R. S. Qhalid Fareed, S. Tottori, T. Inaoka, K. Nishino and S. Sakai:
J. Cryst. Growth 207 (1999) 174[CrossRef].
- R. B. Zetterstrom: J. Matt. Sci. 5 (1970) 1102.
- S. Kurai, K. Nishino and S. Sakai:
Jpn. J. Appl. Phys. 36 (1997) L184[IPAP].
- G. Kamler, J. Zachara, S. Podsiadlo, L. Adamowicz and W. Gebicki:
J. Cryst. Growth 212 (2000) 39[CrossRef].
- M. Imade, S. Kobayashi, F. Kawamura, M. Yoshimura, Y. Mori and T. Sasaki:
Jpn. J. Appl. Phys. 43 (2004) L486[IPAP].
- H. Shin, E. Arkun, D. B. Thomson, P. Miraglia, E. Preble, R. Schlesser, S. Wolter, Z. Sitar and R. F. Davis:
J. Cryst. Growth 236 (2002) 529[CrossRef].
- D. D. Koleske, A. E. Wickenden, R. L. Henry, M. E. Twigg, J. C. Culbertson and R. J. Gorman:
Appl. Phys. Lett. 73 (1998) 2018[AIP Scitation].
- D. D. Koleske, A. E. Wickenden and R. L. Henry: MRS Internet J. Nitride Semicond. Res. 5S1, W3.64 (2000).
- D. D. Koleske, A. E. Wickenden, R. L. Henry, M. E. Twigg, J. C. Culbertson and R. J. Gorman: MRS Internet J. Nitride Semicond. Res. 4S1, G3.70 (1999).
- N. Grandjean, J. Massies, F. Semond, S. Yu. Karpov and R. A. Talalaev:
Appl. Phys. Lett. 74 (1999) 1854[AIP Scitation].
- M. Mayumi, F. Satoh, Y. Kumagai, K. Takemoto and A. Koukitu:
Jpn. J. Appl. Phys. 39 (2000) L707[IPAP].
- A. Rebey, T. Boufaden and B. El Jani:
J. Cryst. Growth 203 (1999) 12[CrossRef].
