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Jpn. J. Appl. Phys. 44 (2005) pp. L140-L143  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Blue, Green and White InGaN Light-Emitting Diodes Grown on Si

Chaun-Feng Shih^1,2, Nie-Chuan Chen¹, Chin-An Chang¹ and Kuo-Shung Liu²

¹Institute of Electro-Optical Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China
²Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China

(Received August 25, 2004; accepted November 22, 2004; published January 7, 2005)

High-brightness InGaN light-emitting diodes (LEDs) have been grown on Si substrates by metal-organic vapor phase epitaxy. Both blue and green LEDs with an output power exceeding 0.7 mW and a lifetime exceeding 500 h were achieved. Two factors were analyzed: the difference between identical LED structures grown on Si and sapphire substrates, and the effect of cracking on the performance of LEDs grown on Si. Using a Si substrate, the LED emission showed a shift toward longer wavelength compared with that from a LED grown on sapphire. The presence of cracking, unless serious, showed little effect on the brightness and performance of the LEDs grown on Si. The mechanisms involved are discussed.

KEYWORDS: MOVPE, LED, Silicon, GaN
URL: http://jjap.ipap.jp/link?JJAP/44/L140/
DOI: 10.1143/JJAP.44.L140

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