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Jpn. J. Appl. Phys. 44 (2005) pp. L342-L344  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Formation of Hexagonal GaN Pyramids by Photo Assisted Electroless Chemical Etching

Dejun Fu^1,2,, Young Shin Park¹, Gennady N. Panin¹ and Tae Won Kang¹

¹Quantum-Functional Semiconductor Research Center, Dongguk University, 100-715 Seoul, Korea
²Accelerator Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China

(Received September 6, 2004; accepted December 22, 2004; published February 25, 2005)

Hexagonal GaN pyramids were formed by the photo enhanced chemical etching of GaN epilayers grown on sapphire by molecular-beam epitaxy. Defective areas of the epilayers were selectively etched in a mixed solution of KOH and K₂S₂O₈ under ultraviolet illumination, producing submicron-size pyramids nonuniformly distributed on the substrate. The cathodoluminescence of the pyramids was redshifted compared with that of the sample before etching. Atomic force microscopy suggested the facets of the pyramids to be (1012) oriented. High-resolution X-ray diffraction showed that the width of the (105) plane of the etched sample is smaller than that of the unetched sample. A larger quantity of K₂S₂O₈ added to the KOH solution led to a high etching rate and the etched sample exhibited a strong cathodoluminescence.

KEYWORDS: GaN, pyramid, electroless chemical etching, chathodoluminescence
URL: http://jjap.ipap.jp/link?JJAP/44/L342/
DOI: 10.1143/JJAP.44.L342

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