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Jpn. J. Appl. Phys. 44 (2005) pp. L398-L401  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Synthesis of Metallic Iridium Oxide Nanowires via Metal Organic Chemical Vapor Deposition

Fengyan Zhang, Robert Barrowcliff, Greg Stecker, Wei Pan, Deli Wang^1, and Sheng-Teng Hsu

Sharp Laboratories of America, Inc. 5700 NW Pacific Rim Blvd, Camas, Washington 98607, U.S.A.
¹Department of Electrical and Computer Engineering, University of California at San Diego, 9500 Gilman Drive, MC 0407, La Jolla, CA 92093, U.S.A.

(Received December 9, 2004; accepted February 3, 2005; published March 4, 2005)

Iridium oxide (IrO₂) nanowires with diameters of 10 to 50 nm and length of 1 to 2 microns were synthesized using Metal Organic Chemical Vapor Deposition (MOCVD) with (methylcyclopentadienyl) (1,5-cyclooctadiene) iridium (I) as the precursor on Si or SiO₂ substrate with and without metal nanoparticles as catalysts. Scanning electron microscopy (SEM) and low-resolution transmission electron microscopy (LRTEM) studies show very uniform nanowires diameters and high-resolution (HR) TEM image and electron diffraction pattern reveal single crystal IrO₂ nanowires having rutile structure with the growth direction along <001>. HRTEM studies further indicate that the IrO₂ nanowires were grown via vapor-solid mechanism having naturally formed sharp tips. It was found that a thin layer of metal film on Si substrate, such as Au, Ti, Ni, and Co, facilitate IrO₂ nanowires synthesis and selective growth of IrO₂ nanowires on substrate was realized. The IrO₂ nanowires are metallic conductive using titanium as contact without annealing. The ability to grow single crystal metallic IrO₂ nanowires opens up novel opportunities in vacuum electronics, nanoelectronics, field emission and display applications.

KEYWORDS: IrO₂, nanowires, MOCVD, metallic
URL: http://jjap.ipap.jp/link?JJAP/44/L398/
DOI: 10.1143/JJAP.44.L398

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