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Jpn. J. Appl. Phys. 44 (2005) pp. L617-L619  |Next Article|  |Table of Contents|
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Express Letter

The Interface between Single Crystalline (001) LaAlO₃ and (001) Silicon

Dmitri O. Klenov, Darrell G. Schlom¹, Hao Li² and Susanne Stemmer

Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
¹Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802-5005, U.S.A.
²Microelectronics and Physical Sciences Laboratory, Motorola, 2100 E. Elliot Rd., Tempe, AZ 85284, U.S.A.

(Received April 14, 2005; accepted April 15, 2005; published May 2, 2005)

Atomic resolution high-angle annular dark-field imaging in scanning transmission electron microscopy is used to determine atomic arrangements at LaAlO₃/Si interfaces, which were obtained by growing Si films epitaxially on (001) LaAlO₃ single crystals. An unusual 3 ×1 interface reconstruction, in which every third La column is removed from the interface plane, is observed. The interface atomic structure is discussed in the context of electrically favorable interfacial bonding between the ionic oxide and Si.

KEYWORDS: high-angle annular dark-field imaging, high-k gate dielectrics, oxide/semiconductor interfaces, scanning transmission electron microscopy
URL: http://jjap.ipap.jp/link?JJAP/44/L617/
DOI: 10.1143/JJAP.44.L617

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