Jpn. J. Appl. Phys. 44 (2005) pp. L98-L100  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (395K)| |Buy This Article|

Express Letter

10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes

Yuriy Bilenko, Alex Lunev, Xuhong Hu, Jianyu Deng, Thomas M Katona, Jianping Zhang, Remis Gaska, Michael S Shur1, Wenhong Sun2, Vinod Adivarahan2, Maxim Shatalov2 and Asif Khan2

Sensor Electronic Technology, Inc., 1195 Atlas Rd, Columbia, SC 29209, U.S.A.
1Broadband Center, ECSE, and Physics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
2Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.

(Received November 19, 2004; accepted December 1, 2004; published December 24, 2004)

We report on the development of solid-state deep ultraviolet light sources optimized for the germicidal applications. Pulsed power levels in excess of 10 mW were achieved for AlGaN based 265 nm light emitting diodes by improving the material quality using Migration-Enhanced Metal Organic Chemical Vapor Deposition. Packaged devices reached the continuous-wave power of 237 µW at 30 mA and a pulse power exceeding 10 mW for 1.2 A driving current.

KEYWORDS: deep UV light emitting diodes, AlGaN, multiple-quantum-well, MEMOCVD
URL: http://jjap.ipap.jp/link?JJAP/44/L98/
DOI: 10.1143/JJAP.44.L98


|Full Text PDF (395K)| |Buy This Article| Citation:

References | Citing Articles (19)

  1. J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang and M. Asif Khan: Appl. Phys. Lett. 81 (2002) 4910[AIP Scitation].
  2. J. P. Zhang, W. Shuai, S. Rai, V. Mandavilli, V. Adivarahan, A. Chitnis, M. Shatalov and M. Asif Khan: Appl. Phys. Lett. 83 (2003) 3456[AIP Scitation].
  3. V. Adivarahan, S. Wu, J. P. Zhang, A. Chitnis, M. Shatalov, V. Mandavilli, R. Gaska and M. Asif Khan: Appl. Phys. Lett. 84 (2004) 4762[AIP Scitation].
  4. W. H. Sun, J. P. Zhang, V. Adivarahan, A. Chitnis, M. Shatalov, S. Wu, V. Mandavilli, J. W. Yang and M. Asif Khan: Appl. Phys. Lett. 85 (2004) 531[AIP Scitation].
  5. A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung and M. Razeghi: Appl. Phys. Lett. 83 (2003) 4701[AIP Scitation].
  6. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish P. Kung and M. Razeghi: Appl. Phys. Lett. 84 (2004) 1046[AIP Scitation].
  7. A. J. Fischer, A. A. Allerman, M. H. Crawford, K. H. A. Bogart, S. R. Lee, R. J. Kaplar, W. W. Chow, S. R. Kurtz, K. W. Fullmer and J. J. Figiel: Appl. Phys. Lett. 84 (2004) 3394[AIP Scitation].
  8. A. Hanlon, P. M. Pattison, J. F. Kaeding, R. Sharma, P. Fini and S. Nakamura: Jpn. J. Appl. Phys. 42 (2003) L628[IPAP].
  9. J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, G. Simin and M. Asif Khan: Appl. Phys. Lett. 80 (2002) 3542[AIP Scitation].
  10. H. M. Wang, J. P. Zhang, C. Q. Chen, Q. Fareed, J. Yang and M. Asif Khan: Appl. Phys. Lett. 81 (2002) 604[AIP Scitation].
  11. J. P. Zhang, M. Asif Khan, W. H. Sun, H. M. Wang, C. Q. Chen, Q. Fareed, E. Kuokstis and J. W. Yang: Appl. Phys. Lett. 81 (2002) 4392[AIP Scitation].
  12. J. P. Zhang, H. M. Wang, W. H. Sun, V. Adivarahan, S. Wu, A. Chitnis, C. Q. Chen, M. Shatalov, E. Kuokstis, J. W. Yang and M. Asif Khan: J. Electronic Materials 32 (2003) 364.
  13. J. P. Zhang, X. Hu, Y. Bilenko, J. Deng, A. Lunev, R. Gaska, M. Shatalov, J. Yang and M. A. Khan: Appl. Phys. Lett. 85 (2004) 55[AIP Scitation].
  14. W. H. Sun, V. Adivarahan, M. Shatalov, Y. Lee, S. Wu, J. W. Yang, J. P. Zhang and M. A. Khan: Jpn. J. Appl. Phys. 43 (2004) L1419[IPAP].
  15. USA EPA UV Disinfection Guidance Manual. EPA 815-D-03-007, June 2003.

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2010 The Japan Society of Applied Physics
Contact Information