Jpn. J. Appl. Phys. 45 (2006) pp. 2009-2013  |Previous Article| |Next Article|  |Table of Contents|
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Carbon Multiprobe on a Si Cantilever for Pseudo-Metal–Oxide–Semiconductor Field-Effect-Transistor

Masao Nagase, Kenichiro Nakamatsu^1,2, Shinji Matsui^1,2, Hideo Namatsu and Hiroshi Yamaguchi

(Received July 4, 2005; accepted August 19, 2005; published online March 27, 2006)

A newly developed scanning probe microscopy system with multiple probes has been applied to measurements of local electrical properties of semiconductor films. Carbon multiprobes fabricated by focused ion beam deposition on a Si cantilever were used for source and drain electrodes on a pseudo-silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) field-effect-transistor (FET) on which the Si substrate and buried oxide (BOX) act as a gate electrode and gate insulator, respectively. The pseudo-MOSFET characteristics of a 10-nm-thick Si layer on an SOI substrate were successfully measured using the multiprobe. Furthermore, a carbon film deposited by electron cyclotron resonance (ECR) plasma sputtering on a Si substrate with an oxide layer was confirmed as a semiconductor for the first time, using the pseudo-FET method with a carbon multiprobe. The results clearly demonstrate that this multiprobe system can be a powerful and widely applicable tool for measuring local device characteristics of electrical materials.

KEYWORDS: scanning probe microscopy, multiprobe, carbon probe, nanospring, cantilever, focused ion beam, pseudo-MOSFET, nanotechnology, FIB deposition, nano-electromechanical system, SOI, ECR sputtered carbon
URL: http://jjap.ipap.jp/link?JJAP/45/2009/
DOI: 10.1143/JJAP.45.2009

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