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Jpn. J. Appl. Phys. 45 (2006) pp. 2580-2592  |Previous Article| |Next Article|  |Table of Contents|
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Electron-Beam Detection of Bits Reversibly Recorded on Epitaxial InSe/GaSe/Si Phase-Change Diodes

Alison Chaiken, Gary A. Gibson, John Chen, Bao S. Yeh**, J. B. Jasinski, Z. Liliental-Weber, K. Nauka, C. C. Yang, D. D. Lindig and S. Subramanian**

Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304, U.S.A.

(Received October 3, 2005; accepted December 6, 2005; published online April 7, 2006)

We demonstrate a data read-back scheme based on electron-beam induced current in a data storage device that utilizes thermal recording onto a phase-change medium. The phase-change medium is part of a heterojunction diode whose local charge-collection efficiency depends on the crystalline or amorphous state of a bit. Current gains up to 65 at 2 keV electron beam energy have been demonstrated using InSe/GaSe/Si epitaxial diodes. Fifteen write–erase cycles are obtained without loss of signal contrast by using a protective cap layer and short write pulses. 100 write–erase cycles have been achieved with some loss of contrast. Erasure times for the bits are longer than in similar polycrystalline In–Se media films. Possible reasons for the long erasure times are discussed in terms of a nucleation- or growth-dominated recrystallization. Prospects for extension to smaller bit sizes using electron-beam writing are considered.

KEYWORDS: data storage, phase change, electron beam, InSe, GaSe, recrystallization, nucleation, optical recording, scanned probe
URL: http://jjap.ipap.jp/link?JJAP/45/2580/
DOI: 10.1143/JJAP.45.2580


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