Jpn. J. Appl. Phys. 45 (2006) pp. L807-L809 |Previous Article| |Next Article| |Table of Contents|
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Letter
Nano-Scale Memory Characteristics of Silicon Nitride Charge Trapping Layer with Silicon Nanocrystals
Hyejung Choi,
Sangmoo Choi1,
Tae-Wook Kim,
Takhee Lee and
Hyunsang Hwang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
1SDL, Samsung Advanced Institute of Technology, Suwon 446-712, Korea
(Received February 15, 2006; accepted June 27, 2006; published online July 28, 2006)
Silicon nanocrystals (Si-NCs) embedded in a silicon nitride (SiN) layer were fabricated as a charge trapping layer for nonvolatile memory (NVM) device applications. Nano-scale memory characteristics were investigated using conductive atomic force microscopy (C-AFM) and a semiconductor parameter analyzer. Nano-scale memory characteristics of Si-NCs embedded in the SiN layer were obtained from the shift of the current–voltage (I–V) curve. Charge trapping/detrapping and multi-level charge storage in Si-NCs embedded in the SiN layer were obtained at a metal–oxide–semiconductor (MOS) structure of about 100 nm2 at room temperature. The flat band voltage (VFB) shift was about 0.37 V, which is agreed well with the calculated VFB shift for one electron per nanocrystal.
KEYWORDS:
SONOS, nonvolatile memory, C-AFM, Si nanocrystal, nano-scale memory
URL:
http://jjap.ipap.jp/link?JJAP/45/L807/
DOI: 10.1143/JJAP.45.L807
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