Jpn. J. Appl. Phys. 46 (2007) pp. 2615-2617 |Previous Article| |Next Article| |Table of Contents|
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Field-Effect Transistor with Deposited Graphite Thin Film
Hiroshi Inokawa,
Masao Nagase1,
Shigeru Hirono2,
Touichiro Goto1,
Hiroshi Yamaguchi1, and
Keiichi Torimitsu1
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
1NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
2NTT Afty Engineering Corporation, Hachioji, Tokyo 192-0918, Japan
(Received September 15, 2006; accepted January 26, 2007; published online April 24, 2007)
By using a bottom-gate top-contact field-effect transistor structure, the field effect of graphite-rich carbon nanocrystallite thin films deposited by electron cyclotron resonance sputtering was investigated. An appreciable ambipolar field effect was observed at the film edge where the thickness was vanishing. On–off current ratios of 2 and 7 were attained at 294 and 150 K, respectively.
KEYWORDS:
graphite, field-effect transistor (FET), electron cyclotron resonance (ECR) sputtering
URL:
http://jjap.ipap.jp/link?JJAP/46/2615/
DOI: 10.1143/JJAP.46.2615
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