Jpn. J. Appl. Phys. 46 (2007) pp. 4616-4621  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (276K)| |Buy This Article|

Crystal Growth of CdSe Quantum Dots Adsorbed on Nanoparticle, Inverse Opal, and Nanotube TiO2 Photoelectrodes Characterized by Photoacoustic Spectroscopy

Taro Toyoda1,2, Terumasa Uehata1, Rihito Suganuma1, Satoru Tamura1, Akira Sato1, Kana Yamamoto1, Qing Shen1,2, and Naoki Kobayashi1,2

1Department of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
2Course of Coherent Optical Science, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan

(Received November 24, 2006; accepted March 20, 2007; published online July 26, 2007)

The crystal growth of semiconductor quantum dots (QDs) adsorbed on nanostructured TiO2 photoelectrodes is important not only for crystallographic studies but also for improving the photovoltaic efficiency of semiconductor-sensitized solar cells. In this study, nanoparticle, inverse opal, and nanotube TiO2 electrodes are prepared. These electrodes are then adsorbed with CdSe QDs as photosensitizers to investigate crystal growth. The average diameters of the CdSe QDs can be estimated from the photoacoustic (PA) spectra. When the adsorption time increases, the CdSe QD diameter increases and then shows saturation. Normal solution growth plus suppression (negative growth) can be obtained by PA analysis. Both of them depend on the morphology of TiO2 electrodes and the final solution concentration for the CdSe QD preparation.

KEYWORDS: semiconductor quantum dots, CdSe, crystal growth, quantum confinement effect, TiO2 nanoparticle, TiO2 inverse opal, TiO2 nanotube, photoelectrode, photoacoustic spectroscopy
URL: http://jjap.ipap.jp/link?JJAP/46/4616/
DOI: 10.1143/JJAP.46.4616


|Full Text PDF (276K)| |Buy This Article| Citation:


References | Citing Articles (4)

  1. M. Grätzel: J. Photochem. Photobiol. C 4 (2003) 145.
  2. Y. Chiba, A. Islam, Y. Watanabe, R. Komiya, N. Koide, and L. Han: Jpn. J. Appl. Phys. 45 (2006) L638[IPAP].
  3. B. O'Regan and M. Grätzel: Nature 353 (1991) 737[CrossRef].
  4. R. Vogel, K. Pohl, and H. Weller: Chem. Phys. Lett. 174 (1990) 241[CrossRef].
  5. R. Vogel, P. Hoyer, and H. Weller: J. Phys. Chem. 98 (1994) 3183[CrossRef].
  6. T. Toyoda, K. Saikusa, and Q. Shen: Jpn. J. Appl. Phys. 38 (1999) 3185[IPAP].
  7. L. M. Peter, D. J. Riley, E. J. Tull, and K. G. U. Wijayantha: Chem. Commun. (2002) 1030.
  8. R. Plass, S. Pelet, J. Krueger, M. Grätzel, and U. Bach: J. Phys. Chem. B 106 (2002) 7578[CrossRef].
  9. T. Toyoda, J. Sato, M. Hayashi, and Q. Shen: Rev. Sci. Instrum. 74 (2003) 297[AIP Scitation].
  10. Q. Shen and T. Toyoda: Thin Solid Films 438–439 (2003) 167[CrossRef].
  11. Q. Shen and T. Toyoda: Jpn. J. Appl. Phys. 43 (2004) 2946[IPAP].
  12. Q. Shen, D. Arae, and T. Toyoda: J. Photochem. Photobiol. A 164 (2004) 75.
  13. T. Toyoda, D. Arae, and Q. Shen: Jpn. J. Appl. Phys. 44 (2005) 4465[IPAP].
  14. L. J. Diguna, M. Murakami, A. Sato, Y. Kumagai, T. Ishihara, N. Kobayashi, Q. Shen, and T. Toyoda: Jpn. J. Appl. Phys. 45 (2006) 5563[IPAP].
  15. Q. Shen, K. Katayama, T. Sawada, M. Yamaguchi, and T. Toyoda: Jpn. J. Appl. Phys. 45 (2006) 5569[IPAP].
  16. O. Niitsoo, S. K. Sarkar, P. Pejoux, S. Rühle, D. Cahen, and G. Hodes: J. Photochem. Photobiol. A 181 (2006) 306.
  17. I. Robel, V. Subramanian, M. Kuno, and P. V. Kamat: J. Am. Chem. Soc. 128 (2006) 2385[CrossRef].
  18. D. F. Underwood, T. Kippeny, and S. J. Rosenthal: Eur. Phys. J. D 16 (2001) 241.
  19. A. J. Nozik: Physica E 14 (2002) 115[CrossRef].
  20. D. Schaller and V. I. Klimov: Phys. Rev. Lett. 92 (2004) 186601[APS].
  21. X. Peng, J. Wickham, and A. P. Alivisatos: J. Am. Chem. Soc. 120 (1998) 5343[CrossRef].
  22. D. V. Talapin, A. L. Rogach, E. V. Shevchenko, A. Kornowski, M. Haase, and H. Weller: J. Am. Chem. Soc. 124 (2002) 5782[CrossRef].
  23. T. Kawahara, S. Funaki, M. Okamoto, Y. Inoue, K. Tahira, Y. Okamoto, and J. Morimoto: Jpn. J. Appl. Phys. 43 (2004) 2932[IPAP].
  24. Y. Inoue, Y. Miyauchi, A. Kimura, T. Kawahara, Y. Okamoto, and J. Morimoto: Jpn. J. Appl. Phys. 43 (2004) 2936[IPAP].
  25. A. B. Cruz, Q. Shen, and T. Toyoda: Jpn. J. Appl. Phys. 44 (2005) 4354[IPAP].
  26. M. Okamoto, Y. Inoue, T. Kawahara, and J. Morimoto: Jpn. J. Appl. Phys. 44 (2005) 4461[IPAP].
  27. A. B. Cruz, Q. Shen, and T. Toyoda: Mater. Sci. Eng. C 25 (2005) 761.
  28. Y. Inoue, T. Toyoda, and J. Morimoto: Jpn. J. Appl. Phys. 45 (2006) 4604[IPAP].
  29. A. Aruga and Y. Okamoto: Jpn. J. Appl. Phys. 45 (2006) 4616[IPAP].
  30. A. B. Cruz, Q. Shen, and T. Toyoda: Thin Solid Films 499 (2006) 104[CrossRef].
  31. J. E. G. J. Wijnhoven and W. Vos: Science 281 (1998) 802[Science].
  32. M. Adachi, Y. Murata, I. Okada, and S. Yoshikawa: J. Electrochem. Soc. 150 (2003) G488.
  33. S. Gorer and G. Hodes: J. Phys. Chem. 98 (1994) 5338[CrossRef].
  34. A. Rosencwaig and A. Gersho: J. Appl. Phys. 47 (1976) 64[AIP Scitation].
  35. X. C. Ai, R. Jin, C. B. Ge, J. J. Wang, Y. H. Zou, and X. R. Xia: J. Chem. Phys. 106 (1997) 3387[AIP Scitation].
  36. A. I. Ekimov, Al. L. Efros, and A. A. Onushchenko: Solid State Commun. 56 (1985) 921[CrossRef].
  37. M. G. Bawendi, A. R. Kortan, M. L. Steigerwald, and L. E. Brus: J. Chem. Phys. 91 (1989) 7282[AIP Scitation].
  38. T. Sugimoto: Adv. Colloid Interface Sci. 28 (1987) 65.

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2010 The Japan Society of Applied Physics
Contact Information