Jpn. J. Appl. Phys. 46 (2007) pp. 5639-5642  |Previous Article| |Next Article|  |Table of Contents|
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Local Conductance Imaging of Semiconductor Nanowires on an Insulative Substrate Using an Integrated Nanogap Probe

Masao Nagase and Hiroshi Yamaguchi

(Received January 18, 2007; accepted March 26, 2007; published online August 23, 2007)

We have developed a new scanning probe microscopy (SPM)-based tool that enables local in-plane conductance measurements using a split electrode (nanogap) probe. The nanogap integrated on a silicon cantilever was fabricated by focused ion beam (FIB) milling. The integrated nanotool with 45-nm-gap electrodes was used to perform two-terminal conductance measurements of semiconductor nanowires on an insulator substrate. A local conductance image of InAs nanowires grown on a GaAs substrate was successfully obtained with sub-100-nm resolution.

KEYWORDS: scanning probe microscopy, multiprobe, nanogap, local conductance, InAs, GaAs, focused ion beam, nanotechnology
URL: http://jjap.ipap.jp/link?JJAP/46/5639/
DOI: 10.1143/JJAP.46.5639

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