Jpn. J. Appl. Phys. 46 (2007) pp. 7294-7296 |Previous Article| |Next Article| |Table of Contents|
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Brief Communication
Strain State and Thermal Stability of Strained-Si-on-Insulator Substrates
Yusuke Hoshi,
Atsushi Fukumoto,
Kentarou Sawano,
Ian Cayrefourcq1,
Makoto Yoshimi2, and
Yasuhiro Shiraki
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
1SOITEC, Parc Technologique des Fontaines, Bernin 38926, Crolles Cedex, France
2SOITEC Asia, 3-3-1 Marunouchi, Chiyoda-ku, Tokyo 100-0005, Japan
(Received May 15, 2007; accepted August 20, 2007; published online November 6, 2007)
The strain state and thermal stability of strained-Si-on-insulator (sSOI) substrates fabricated by the Smart Cut® technique were precisely analyzed by X-ray diffraction reciprocal space mapping and Raman spectroscopy. It was demonstrated that the strain was well maintained even after annealing at temperatures up to 1120 °C in spite of the thickness being larger than the critical thickness. The strain reduction of only 10% was observed at 1150 °C, but the surface smoothness with the RMS roughness below 0.2 nm and high crystal quality did not change. This indicates the high applicability of sSOI to the current Si processes.
KEYWORDS:
sSOI, SOI, strained Si, silicon germanium, thermal stability, strain relaxation
URL:
http://jjap.ipap.jp/link?JJAP/46/7294/
DOI: 10.1143/JJAP.46.7294
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