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Analytical Description of Inversion-Layer Quantum Effects Using the Density Gradient Model and Singular Perturbation Theory
Shigeyasu Uno,
Henok Abebe1, and
Ellis Cumberbatch2
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
1MOSIS Service, Information Sciences Institute, University of Southern California, Los Angeles, CA 90292, U.S.A.
2School of Mathematical Sciences, Claremont Graduate University, Claremont, CA 91711, U.S.A.
(Received March 5, 2007; accepted August 30, 2007; published online December 6, 2007)
Analytical formulae for electrostatic potential and electron density profiles in the n-type planar metal oxide semiconductor field-effect-transistor inversion layer are presented. Equations based on the density gradient model are analytically solved using singular perturbation theory. The formulae give good agreement with exact numerical solutions over a broad range of voltages and device structures.
KEYWORDS:
inversion layer, quantum effect, density gradient model, perturbation theory
URL:
http://jjap.ipap.jp/link?JJAP/46/7648/
DOI: 10.1143/JJAP.46.7648
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