Quick Search: Journal  Author  Title/Abstract  Vol./Year 

Jpn. J. Appl. Phys. 46 (2007) pp. L77-L79  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (388K)| |Buy This Article|

Letter

Soft X-Ray Absorption and Emission Study of Silicon Oxynitride/Si(100) Interface

Yoshiyuki Yamashita1, Kazuhiro Oguchi1, Kozo Mukai1, Jun Yoshinobu1, Yoshihisa Harada2, Takashi Tokushima2, Shik Shin1,2, Naoyoshi Tamura3, Hiroshi Nohira4, and Takeo Hattori5,6,7

1The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
2Riken/SPring-8, Sayo-gun, Hyogo 679-5148, Japan
3Advanced Process Development Department, C2-Project Div., Fujitsu Laboratories Ltd., Akiruno, Tokyo 197-0833, Japan
4Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Setagaya-ku, Tokyo 158-8557, Japan
5Research Center for Silicon Nano-Science, Musashi Institute of Technology, Setagaya-ku, Tokyo 158-0082, Japan
6Future Information Industry Creation Center, Tohoku University, Sendai 980-8579, Japan
7Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan

(Received September 28, 2006; accepted December 2, 2006; published online January 12, 2007)

The atom-specific electronic structure at the oxynitride/Si interface was investigated by soft X-ray absorption and emission spectroscopy in order to elucidate the relationship of the incorporation effect of nitrogen atoms at the interface with the performance of metal–oxide–silicon devices. At the interface, the conduction band minimum (CBM) decreases when the concentration of N atoms at the interface increases. For valence states, the width of the nonbonding states of N atoms increases when the concentration of N atoms is high, indicating that an inhomogeneous interface is formed. Thus, the excessive incorporation of nitrogen atoms at the SiO2/Si(100) interface decreases CBM and induces the formation of a more inhomogeneous interface, which decreases carrier mobility in the channel region.

KEYWORDS: interface, oxynitride, X-ray absorption, X-ray emission, Si(100)
URL: http://jjap.ipap.jp/link?JJAP/46/L77/
DOI: 10.1143/JJAP.46.L77


|Full Text PDF (388K)| |Buy This Article| Citation:

References | Citing Articles (2)

  1. H. C. Lu, E. P. Gusev, T. Gustafsson, E. Garfunkel, M. L. Green, D. Brasen, and L. C. Feldman: Appl. Phys. Lett. 69 (1996) 2713[AIP Scitation].
  2. E. P. Gusev, H. C. Lu, E. L. Garfunkel, T. Gustafsson, and M. L. Green: IBM J. Res. Dev. 43 (1999) 265.
  3. D. Bouvet, P. A. Clivaz, M. Dutoit, C. Coluzza, J. Almeida, G. Margaritondo, and F. Pio: J. Appl. Phys. 79 (1996) 7114[AIP Scitation].
  4. J. R. Shallenberger, D. A. Cole, and S. W. Noval: J. Vac. Sci. Technol. A 17 (1999) 1086[AIP Scitation].
  5. J. Sapjeta, M. L. Green, J. P. Chang, P. J. Siliverman, T. W. Sorsch, B. E. Weir, W. Gladden, Y. Ma, C. Y. Sung, and W. N. Lennard: Mater. Res. Symp. Proc. 567 (1999) 289.
  6. J. Stöhr: NEXAFS Spectroscopy (Springer-Verlag, Berlin, 1992).
  7. A. Kotani and S. Shin: Rev. Mod. Phys. 73 (2001) 203[APS].
  8. N. Wassdahl, A. Nilsson, T. Wiell, H. Tillborg, L. Duda, J. H. Guo, N. Mårtensson, J. N. Andersen, and R. Nyholm: Phys. Rev. Lett. 69 (1992) 812[APS].
  9. Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, T. Takeuchi, Y. Takata, S. Shin, K. Akagi, and S. Tsuneyuki: Phys. Rev. B 73 (2006) 045336[APS].
  10. Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, Y. Takata, and S. Shin: J. Phys. IV 132 (2006) 259.
  11. Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, T. Takeuchi, Y. Takata, S. Shin, K. Akagi, and S. Tsuneyuki: e-J. Surf. Sci. Nanotechnol. 4 (2006) 280.
  12. H. Kato, K. Nishizaki, K. Takahashi, H. Nohira, N. Tamura, K. Hikazutani, S. Sano, and T. Hattori: Appl. Surf. Sci. 190 (2002) 39[CrossRef].
  13. T. Tokushima, Y. Harada, M. Watanabe, Y. Takata, E. Ishiguro, A. Hiraya, and S. Shin: Surf. Rev. Lett. 9 (2002) 503.
  14. K. Takahashi, K. Inoue, N. Tamura, K. Hikazutani, S. Sano, and T. Hattori: Proc. 2nd Int. Conf. Semiconductor Technology, Electrochem. Soc., Shanghai, 2001, Vol. 2001-17, p. 225.
  15. S. Shinagawa, H. Nohira, T. Ikuta, M. Hori, M. Kase, and T. Hattori: Microelectron. Eng. 80 (2005) 98.
  16. C. Ance, F. de Chelle, J. P. Ferraton, P. Ordejón, and F. Ynduráin: Appl. Phys. Lett. 60 (1992) 1399[AIP Scitation].
  17. G. Wiech and A. Šimiunek: Phys. Rev. B 49 (1994) 5398[APS].
  18. K. Inoue, K. Furuno, H. Katoh, N. Tamura, K. Hikazutani, S. Sano, and T. Hattori: Jpn. J. Appl. Phys. 40 (2001) L539[IPAP].
|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2010 The Japan Society of Applied Physics
Contact Information