Jpn. J. Appl. Phys. 47 (2008) pp. 1251-1255  |Previous Article| |Next Article|  |Table of Contents|
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Optical and Electrical Characterization of Poly(3-hexylthiophene-2,5-diyl) Interface with Al and LiF

Vipul Singh, Anil K. Thakur, Shyam S. Pandey, Wataru Takashima, and Keiichi Kaneto

(Received April 12, 2007; accepted July 3, 2007; published online February 15, 2008)

The qualitative nature of the interface of poly(3-hexylthiophene-2,5-diyl) (P3HT) with aluminum (Al) and lithium fluoride (LiF) have been studied by photoluminescence (PL) spectra and photo induced memory techniques. The PL quenching and photo induced memory effect are clearly distinguishable in P3HT films coated with Al and LiF coated separately. It has been observed that LiF only forms an insulating barrier while aluminum creates a depletion layer with P3HT. The observed effects have been explained, based on carrier diffusion and band bending models.

KEYWORDS: interface, photoluminescence, photo-induced memory, depletion layer, poly(3-hexylthiophene)
URL: http://jjap.ipap.jp/link?JJAP/47/1251/
DOI: 10.1143/JJAP.47.1251

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