Jpn. J. Appl. Phys. 47 (2008) pp. 4487-4490  |Previous Article| |Next Article|  |Table of Contents|
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Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon

Shin Yabuuchi^1,2, Yukinori Ono¹, Masao Nagase¹, Hiroyuki Kageshima¹, Akira Fujiwara¹, and Eiji Ohta²

(Received October 29, 2007; accepted March 21, 2008; published online June 13, 2008)

The annealing-temperature (700–900 °C) dependence of the ferromagnetism of manganese-implanted silicon is investigated. In the annealed samples, the manganese-containing nanoparticles, whose mean size was found to get bigger with temperature, are formed and these samples show ferromagnetism. We obtain evidence that the samples annealed at 800–850 °C produce two kinds of ferromagnets and that one of them offers a coercivity as high as 2500 Oe, suggesting the possibility of Si-based nanostructures with stable ferromagnetism. The origin of these ferromagnetisms is also discussed in conjunction with the size distribution of the nanoparticles.

KEYWORDS: silicon, manganese, silicide, nanoparticle, spintronics, magnetism, implantation
URL: http://jjap.ipap.jp/link?JJAP/47/4487/
DOI: 10.1143/JJAP.47.4487

References | Citing Articles (2)

1. M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M. B. Huang, F. G. Ramos, G. Agnello, and V. P. LaBella: Phys. Rev. B 71 (2005) 033302[APS].
2. M. Bolduc, C. Awo-Affouda, F. Ramos, and V. P. LaBella: J. Vac. Sci. Technol. A 24 (2006) 1648[AIP Scitation].
3. C. Awo-Affouda, M. Bolduc, M. B. Huang, F. Ramos, K. A. Dunn, B. Thiel, G. Agnello, and V. P. LaBella: J. Vac. Sci. Technol. A 24 (2006) 1644[AIP Scitation].
4. P. R. Bandaru, J. Park, J. S. Lee, Y. J. Tang, L.-H. Chen, S. Jin, S. A. Song, and J. R. O'Brien: Appl. Phys. Lett. 89 (2006) 112502[AIP Scitation].
5. H. W. Wu, C. J. Tsai, and L. J. Chen: Appl. Phys. Lett. 90 (2007) 043121[AIP Scitation].
6. S. Zhou, K. Potzger, G. Zhang, A. Mücklich, F. Eichhorn, N. Schell, R. Grötzschel, B. Schmidt, W. Skorupa, M. Helm, J. Fassbender, and D. Geiger: Phys. Rev. B 75 (2007) 085203[APS].
7. S. Yabuuchi, E. Ohta, H. Kageshima, and A. Taguchi: Physica B 376 (2006) 672[Elsevier].
8. U. Gottlieb, A. Sulpice, B. Lambert-Andron, and O. Laborde: J. Alloys Compd. 361 (2003) 13.
9. T. Dubroca, J. Hack, R. E. Hummel, and A. Angerhofer: Appl. Phys. Lett. 88 (2006) 182504[AIP Scitation].
10. F. Shimura: Semiconductor Silicon Crystal Technology (Academic, San Diego, CA, 1989).
11. T. B. Massalski, H. Okamoto, P. R. Subramanian, and L. Kacprzak: Binary Alloy Phase Diagrams (ASM International, Materials Park, OH, 1992) 2nd ed., p. 2602.
12. H. H. Woodbury and G. W. Ludwing: Phys. Rev. 117 (1960) 102[APS].
13. J. Wang, M. Hirai, M. Kusaka, and M. Iwami: Appl. Surf. Sci. 113–114 (1997) 53[CrossRef].
14. Y. Imai and A. Watanabe: Intermetallics 13 (2005) 233.
15. Y. Imai, M. Mukaida, and T. Tsunoda: Intermetallics 8 (2000) 381.
16. E. C. Stoner and E. P. Wohlfarth: IEEE Trans. Magn. 27 (1991) 3475.
17. G. W. D. Spratt, P. R. Bissell, R. W. Chantrell, and E. P. Wohlfarth: J. Magn. Magn. Mater. 75 (1988) 309[CrossRef].
18. M. Respaud, J. M. Broto, H. Rakoto, A. R. Fert, L. Thomas, B. Barbara, M. Verelst, E. Snoeck, P. Lecante, A. Mosset, J. Osuna, T. Ould Ely, C. Amiens, and B. Chaudret: Phys. Rev. B 57 (1998) 2925[APS].
19. T. Shinohara, T. Sato, and T. Taniyama: Phys. Rev. Lett. 91 (2003) 197201[APS].