Jpn. J. Appl. Phys. 47 (2008) pp. 5106-5108  |Previous Article| |Next Article|  |Table of Contents|
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Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO₂/Si Cathode for Nano-Decomposition

Katsuhiko Nishiguchi, Masao Nagase, Toru Yamaguchi, Akira Fujiwara, and Hiroshi Yamaguchi

(Received November 1, 2007; accepted January 22, 2008; published online June 20, 2008)

We fabricated an electron-emission cathode with a Si/SiO₂/Si structure using metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication technology. Electrons travel from an electron-source Si layer to a thin polycrystalline Si (poly-Si) through a thin SiO₂ and some of them with high energy, i.e., hot electrons, are emitted from the poly-Si surface. By utilizing an electron-inversion layer as the electron source, high efficiency and stability of electron emission were achieved. Material decomposition at a depth of a few nanometers was also demonstrated using a low-energy-electron irradiation from the cathode operated in a low vacuum condition.

KEYWORDS: electron emission, MOSFET, material decomposition
URL: http://jjap.ipap.jp/link?JJAP/47/5106/
DOI: 10.1143/JJAP.47.5106

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