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Jpn. J. Appl. Phys. 47 (2008) pp. 8214-8217  |Previous Article| |Next Article|  |Table of Contents|
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Self-Assembled Growth and Characterization of MnxP Nanowires

Katsuaki Sato1,2, Alexei Bouravleuv1,3, Akinori Koukitu1, and Takayuki Ishibashi4

1Graduate School of Engineering, Tokyo University of Agriculture and Technology, Nakacho, Koganei, Tokyo 184-8588, Japan
2Office of Basic Research, Japan Science and Technology Agency, Sambancho, Chiyoda-ku, Tokyo 102-0075, Japan
3A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russian Federation
4Department of Materials Science and Technology, Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188, Japan

(Received December 28, 2007; accepted July 31, 2008; published online October 17, 2008)

MnP nanowires have been grown by molecular beam epitaxy (MBE) without any preliminary deposited metal catalyst on InP(100) and GaAs(111)B substrates. Mn was supplied using a conventional Knudsen cell, whereas P2 was supplied as a gas by the decomposition of tertiary butylphosphine (TBP) using a cracking cell. The self-assembled growth of nanowires was observed when the substrate temperature exceeded 430 °C. Nanowires obtained on the InP(100) surface had diameters close to 150 nm, lengths of up to 2 µm, whereas nanowires grown on the GaAs(111)B surface had widths of up to 600 nm, lengths of up to 30 µm, and clear atomic facets. Magnetic and optical characterizations were also carried out.

KEYWORDS: nanowire, manganese phosphide, magnetic properties, ellipsometry
URL: http://jjap.ipap.jp/link?JJAP/47/8214/
DOI: 10.1143/JJAP.47.8214


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